Trap levels in the atomic layer deposition-ZnO/GaN heterojunction - Thermal admittance spectroscopy studies

Journal of Applied Physics

Volumn 113, Issue 19, 2013, Pages

  Krajewski, Tomasz A ^a   Stallinga, Peter ^b   Zielony, Eunika ^c   Goscinski, Krzysztof ^a   Kruszewski, Piotr ^d   Wachnicki, Lukasz ^a   Aschenbrenner, Timo ^e   Hommel, Detlef ^e   Guziewicz, Elzbieta ^a   Godlewski, Marek ^a,f  

^a INSTITUTE OF PHYSICS   (Poland)

^b UNIVERSITY OF ALGARVE   (Portugal)

^c WROCLAW UNIVERSITY OF TECHNOLOGY   (Poland)

^d INSTITUTE OF HIGH PRESSURE PHYSICS   (Poland)

^e UNIVERSITY OF BREMEN   (Germany)

^f Faculty of Mathematics and Natural Sciences   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

ADMITTANCE SPECTROSCOPIES; ATOMIC LAYER; CAPACITANCE TRANSIENT MEASUREMENTS; DOPING LEVELS; ORDERS OF MAGNITUDE; THERMAL ADMITTANCE SPECTROSCOPY; THREE ORDERS OF MAGNITUDE; TRAP LEVELS;

ATOMIC LAYER DEPOSITION; ELECTRIC ADMITTANCE; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 84878393262     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4805655     Document Type: Article

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