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Physica Status Solidi (C) Current Topics in Solid State Physics

Volumn 5, Issue 9, 2008, Pages 3088-3090

Junction properties of nitrogen-doped ZnO thin films

(5) Lu, J G a,b Fujita, S a Kawaharamura, T a Nishinaka, H a Kamada, Y a

a KYOTO UNIVERSITY (Japan)

b ZHEJIANG UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

CURRENT-VOLTAGE MEASUREMENTS; FORWARD BIAS; HARD BREAKDOWN; JUNCTION PROPERTIES; N-DOPED; NITROGEN-DOPED; P TYPE ZNO; P-N HOMOJUNCTIONS; P-TYPE; RECTIFYING BEHAVIORS; REVERSE BIAS; ROOM TEMPERATURE; SI SUBSTRATES; TIME-DEPENDENT; TURN ON VOLTAGE; ZNO; ZNO LAYERS;

ATMOSPHERIC PRESSURE; DISTILLATION; OHMIC CONTACTS; SILICON; SUBSTRATES;

ZINC OXIDE;

EID: 67649990151 PISSN: 18626351 EISSN: 16101642 Source Type: Journal
DOI: 10.1002/pssc.200779171 Document Type: Conference Paper

Times cited : (9)

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