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Volumn 582, Issue , 2014, Pages 594-597

XPS study of arsenic doped ZnO grown by Atomic Layer Deposition

Author keywords

Arsenic; Atomic Layer Deposition; Optical properties; Thin films; X ray photoelectron spectroscopy; Zinc oxide

Indexed keywords

ANNEALING; ARSENIC; ATMOSPHERIC TEMPERATURE; ATOMS; BINDING ENERGY; DEPOSITION; EPITAXIAL GROWTH; FERMI LEVEL; METALLIC FILMS; OPTICAL PROPERTIES; OXIDE FILMS; PHOTOELECTRON SPECTROSCOPY; PHOTOELECTRONS; PHOTONS; SEMICONDUCTOR QUANTUM WELLS; TEMPERATURE; THIN FILMS; X RAY PHOTOELECTRON SPECTROSCOPY; ZINC OXIDE;

EID: 84883637600     PISSN: 09258388     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.jallcom.2013.08.061     Document Type: Article
Times cited : (25)

References (26)


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.