Characteristics of ZnO:As/GaN heterojunction diodes obtained by PA-MBE

Journal of Physics D: Applied Physics

Volumn 46, Issue 3, 2013, Pages

  Przezdziecka, E ^a   Wierzbicka, A ^a   Reszka, A ^a   Goscinski, K ^a   Droba, A ^a   Jakiela, R ^a   Dobosz, D ^a   Krajewski, T A ^a   Kopalko, K ^a   Sajkowski, J M ^a   Stachowicz, M ^a   Pietrzyk, M A ^a   Kozanecki, A ^a  

^a INSTITUTE OF PHYSICS   (Poland)

Author keywords

[No Author keywords available]

Indexed keywords

APPLIED VOLTAGES; ARSENIC CONCENTRATION; CURRENT RATIOS; HETEROJUNCTION DIODES; LAYER STRUCTURES; MATERIAL SYSTEMS; PLASMA-ASSISTED MOLECULAR BEAM EPITAXY; SAPPHIRE SUBSTRATES; SECONDARY ION MASS SPECTROSCOPY; WIDE BAND GAP; ZNO; ZNO FILMS;

ARSENIC; ATOMIC FORCE MICROSCOPY; GALLIUM NITRIDE; MOLECULAR BEAM EPITAXY; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SECONDARY ION MASS SPECTROMETRY; SEMICONDUCTOR DIODES; X RAY DIFFRACTION; ZINC OXIDE;

HETEROJUNCTIONS;

EID: 84871203022     PISSN: 00223727     EISSN: 13616463     Source Type: Journal    
DOI: 10.1088/0022-3727/46/3/035101     Document Type: Article

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