메뉴 건너뛰기




Volumn 16, Issue , 2014, Pages

The gradual nature of threshold switching

Author keywords

Amorphous chalcogenides; Electrical excitation; Phase change materials; Threshold switching

Indexed keywords

AMORPHOUS MATERIALS; DIGITAL STORAGE; ELECTRIC FIELDS; GERMANIUM; INORGANIC COMPOUNDS; SWITCHING; THRESHOLD VOLTAGE;

EID: 84918501139     PISSN: 13672630     EISSN: None     Source Type: Journal    
DOI: 10.1088/1367-2630/16/11/113044     Document Type: Article
Times cited : (43)

References (64)
  • 5
    • 55449106208 scopus 로고    scopus 로고
    • Phase-change random access memory: A scalable technology
    • Raoux S et al 2008 Phase-change random access memory: a scalable technology IBM J. Res. Dev. 52 465-79
    • (2008) IBM J. Res. Dev. , vol.52 , pp. 465-479
    • Raoux, S.1
  • 8
    • 36049053305 scopus 로고
    • Reversible electrical switching phenomena in disordered structures
    • Ovshinsky S R 1968 Reversible electrical switching phenomena in disordered structures Phys. Rev. Lett. 21 1450
    • (1968) Phys. Rev. Lett. , vol.21 , pp. 1450
    • Ovshinsky, S.R.1
  • 9
    • 0014654894 scopus 로고
    • Temperature distribution and its kinetics in a semiconducting sandwich
    • Böer K W and Döhler G 1969 Temperature distribution and its kinetics in a semiconducting sandwich Phys. Status Solidi B 36 679-93
    • (1969) Phys. Status Solidi B , vol.36 , pp. 679-693
    • Böer, K.W.1    Döhler, G.2
  • 10
  • 11
    • 18144438546 scopus 로고
    • Characteristics and mechanism of threshold switching
    • Henisch H K, Pryor R W and Vendura J 1972 Characteristics and mechanism of threshold switching J. Non-Cryst. Solids 8-10 415-21
    • (1972) J. Non-Cryst. Solids , vol.8-10 , pp. 415-421
    • Henisch, H.K.1    Pryor, R.W.2    Vendura, J.3
  • 12
    • 0343914702 scopus 로고
    • Electrothermal switching in amorphous semiconductors
    • Kaplan T and Adler D 1972 Electrothermal switching in amorphous semiconductors J. Non-Cryst. Solids 8-10 538-43
    • (1972) J. Non-Cryst. Solids , vol.8-10 , pp. 538-543
    • Kaplan, T.1    Adler, D.2
  • 13
    • 18144450783 scopus 로고
    • Theory of electrical instabilities of mixed electronic and thermal origin
    • Kroll D M and Cohen M H 1972 Theory of electrical instabilities of mixed electronic and thermal origin J. Non-Cryst. Solids 8-10 544-51
    • (1972) J. Non-Cryst. Solids , vol.8-10 , pp. 544-551
    • Kroll, D.M.1    Cohen, M.H.2
  • 14
    • 30544452224 scopus 로고
    • Thermal and non-thermal processes in threshold switching
    • Lee S H and Henisch H K 1972 Thermal and non-thermal processes in threshold switching J. Non-Cryst. Solids 11 192-8
    • (1972) J. Non-Cryst. Solids , vol.11 , pp. 192-198
    • Lee, S.H.1    Henisch, H.K.2
  • 15
    • 49649133573 scopus 로고
    • The switching behavior of chalcogenide glass with semiconducting electrodes
    • Stiegler H and Haberland D R 1972 The switching behavior of chalcogenide glass with semiconducting electrodes J. Non-Cryst. Solids 11 147-52
    • (1972) J. Non-Cryst. Solids , vol.11 , pp. 147-152
    • Stiegler, H.1    Haberland, D.R.2
  • 16
    • 0001010132 scopus 로고
    • Theory of electrical instabilities of mixed electronic and thermal origin
    • Kroll D M 1974 Theory of electrical instabilities of mixed electronic and thermal origin Phys. Rev. B 9 1669
    • (1974) Phys. Rev. B , vol.9 , pp. 1669
    • Kroll, D.M.1
  • 17
    • 0016079936 scopus 로고
    • Equations governing threshold switching in amorphous semiconductors
    • Walsh P J and Vezzoli G C 1974 Equations governing threshold switching in amorphous semiconductors Appl. Phys. Lett. 25 28
    • (1974) Appl. Phys. Lett. , vol.25 , pp. 28
    • Walsh, P.J.1    Vezzoli, G.C.2
  • 18
    • 0016572004 scopus 로고
    • Threshold switching and the on-state in non-crystalline chalcogenide semiconductors
    • Vezzoli G C, Walsh P J and Doremus L W 1975 Threshold switching and the on-state in non-crystalline chalcogenide semiconductors J. Non-Cryst. Solids 18 333-73
    • (1975) J. Non-Cryst. Solids , vol.18 , pp. 333-373
    • Vezzoli, G.C.1    Walsh, P.J.2    Doremus, L.W.3
  • 19
    • 35949040018 scopus 로고
    • The mechanism of threshold switching in amorphous alloys
    • Adler D, Henisch H K and Mott N 1978 The mechanism of threshold switching in amorphous alloys Rev. Mod. Phys. 50 209
    • (1978) Rev. Mod. Phys. , vol.50 , pp. 209
    • Adler, D.1    Henisch, H.K.2    Mott, N.3
  • 20
    • 0018430398 scopus 로고
    • Model of on state of amorphous chalcogenide threshold switches
    • Petersen K E and Adler D 1979 Model of on state of amorphous chalcogenide threshold switches J. Appl. Phys. 50 925
    • (1979) J. Appl. Phys. , vol.50 , pp. 925
    • Petersen, K.E.1    Adler, D.2
  • 22
    • 34548647299 scopus 로고    scopus 로고
    • Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices
    • Ielmini D and Zhang Y 2007 Analytical model for subthreshold conduction and threshold switching in chalcogenide-based memory devices J. Appl. Phys. 102 054517
    • (2007) J. Appl. Phys. , vol.102 , pp. 054517
    • Ielmini, D.1    Zhang, Y.2
  • 23
    • 50849118507 scopus 로고    scopus 로고
    • Field-induced nucleation in phase change memory
    • Karpov V, Kryukov Y, Karpov I and Mitra M 2008 Field-induced nucleation in phase change memory Phys. Rev. B 78 052201
    • (2008) Phys. Rev. B , vol.78 , pp. 052201
    • Karpov, V.1    Kryukov, Y.2    Karpov, I.3    Mitra, M.4
  • 24
    • 45149123944 scopus 로고    scopus 로고
    • Threshold switching and phase transition numerical models for phase change memory simulations
    • Redaelli A, Pirovano A, Benvenuti A and Lacaita A L 2008 Threshold switching and phase transition numerical models for phase change memory simulations J. Appl. Phys. 103 111101
    • (2008) J. Appl. Phys. , vol.103 , pp. 111101
    • Redaelli, A.1    Pirovano, A.2    Benvenuti, A.3    Lacaita, A.L.4
  • 25
    • 84996253214 scopus 로고
    • Poole-Frenkel conduction in amorphous solids
    • Hill R M 1971 Poole-Frenkel conduction in amorphous solids Phil. Mag. 23 59-86
    • (1971) Phil. Mag , vol.23 , pp. 59-86
    • Hill, R.M.1
  • 27
    • 0015630299 scopus 로고
    • On the interpretation of high field effects in chalcogenide thin films
    • Marshall J M 1973 On the interpretation of high field effects in chalcogenide thin films Solid-State Electron. 16 629-31
    • (1973) Solid-State Electron. , vol.16 , pp. 629-631
    • Marshall, J.M.1
  • 28
    • 0015586902 scopus 로고
    • Electronic conduction and switching in chalcogenide glasses
    • Owen A E and Robertson J M 1973 Electronic conduction and switching in chalcogenide glasses IEEE Trans. Electron. Dev. 20 105-22
    • (1973) IEEE Trans. Electron. Dev. , vol.20 , pp. 105-122
    • Owen, A.E.1    Robertson, J.M.2
  • 29
    • 84905641507 scopus 로고    scopus 로고
    • Time-dependent transport in amorphous semiconductors: Instability in the field-controlled regime
    • Buscemi F, Piccinini E, Brunetti R, Rudan M and Jacoboni C 2014 Time-dependent transport in amorphous semiconductors: instability in the field-controlled regime Appl. Phys. Lett. 104 262106
    • (2014) Appl. Phys. Lett. , vol.104 , pp. 262106
    • Buscemi, F.1    Piccinini, E.2    Brunetti, R.3    Rudan, M.4    Jacoboni, C.5
  • 34
    • 84867561682 scopus 로고    scopus 로고
    • Electrical conduction in chalcogenide glasses of phase change memory
    • Nardone M, Simon M, Karpov I V and Karpov V G 2012 Electrical conduction in chalcogenide glasses of phase change memory J. Appl. Phys. 112 071101
    • (2012) J. Appl. Phys. , vol.112 , pp. 071101
    • Nardone, M.1    Simon, M.2    Karpov, I.V.3    Karpov, V.G.4
  • 35
    • 77954214958 scopus 로고    scopus 로고
    • Function by defects at the atomic scale - new concepts for non-volatile memories
    • Waser R, Dittmann R, Salinga M and Wuttig M 2010 Function by defects at the atomic scale - new concepts for non-volatile memories Solid-State Electron. 54 830-40
    • (2010) Solid-State Electron. , vol.54 , pp. 830-840
    • Waser, R.1    Dittmann, R.2    Salinga, M.3    Wuttig, M.4
  • 36
    • 84866735724 scopus 로고    scopus 로고
    • A ferroelectric memristor
    • Chanthbouala A et al 2012 A ferroelectric memristor Nat. Mater. 11 860-4
    • (2012) Nat. Mater , vol.11 , pp. 860-864
    • Chanthbouala, A.1
  • 37
    • 77949760330 scopus 로고    scopus 로고
    • Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells
    • Schroeder H, Zhirnov V V, Cavin R K and Waser R 2010 Voltage-time dilemma of pure electronic mechanisms in resistive switching memory cells J. Appl. Phys. 107 054517
    • (2010) J. Appl. Phys. , vol.107 , pp. 054517
    • Schroeder, H.1    Zhirnov, V.V.2    Cavin, R.K.3    Waser, R.4
  • 39
    • 16244410161 scopus 로고    scopus 로고
    • Low-cost and nanoscale non-volatile memory concept for future silicon chips
    • Lankhorst M H, Ketelaars B W and Wolters R A 2005 Low-cost and nanoscale non-volatile memory concept for future silicon chips Nat. Mater. 4 347-52
    • (2005) Nat. Mater , vol.4 , pp. 347-352
    • Lankhorst, M.H.1    Ketelaars, B.W.2    Wolters, R.A.3
  • 46
    • 47349131110 scopus 로고    scopus 로고
    • Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses
    • Ielmini D 2008 Threshold switching mechanism by high-field energy gain in the hopping transport of chalcogenide glasses Phys. Rev. B 78 035308
    • (2008) Phys. Rev. B , vol.78 , pp. 035308
    • Ielmini, D.1
  • 47
    • 69549126428 scopus 로고    scopus 로고
    • Threshold field of phase change memory materials measured using phase change bridge devices
    • Krebs D, Raoux S, Rettner C T, Burr G W, Salinga M and Wuttig M 2009 Threshold field of phase change memory materials measured using phase change bridge devices Appl. Phys. Lett. 95 082101
    • (2009) Appl. Phys. Lett. , vol.95 , pp. 082101
    • Krebs, D.1    Raoux, S.2    Rettner, C.T.3    Burr, G.W.4    Salinga, M.5    Wuttig, M.6
  • 50
    • 49849117039 scopus 로고
    • Ovonic threshold switching characteristics
    • Shanks R R 1970 Ovonic threshold switching characteristics J. Non-Cryst. Solids 2 504-14
    • (1970) J. Non-Cryst. Solids , vol.2 , pp. 504-514
    • Shanks, R.R.1
  • 51
    • 18144445630 scopus 로고
    • On the time-delay in chalcogenide glass threshold switches
    • Lee S H, Henisch H K and Burgess W D 1972 On the time-delay in chalcogenide glass threshold switches J. Non-Cryst. Solids 8-10 422-6
    • (1972) J. Non-Cryst. Solids , vol.8-10 , pp. 422-426
    • Lee, S.H.1    Henisch, H.K.2    Burgess, W.D.3
  • 55
    • 77951621331 scopus 로고    scopus 로고
    • Threshold-switching delay controlled by 1/f current fluctuations in phase-change memory devices
    • Lavizzari S, Sharma D and Ielmini D 2010 Threshold-switching delay controlled by 1/f current fluctuations in phase-change memory devices IEEE Trans. Electron Devices 57 1047-54
    • (2010) IEEE Trans. Electron Devices , vol.57 , pp. 1047-1054
    • Lavizzari, S.1    Sharma, D.2    Ielmini, D.3
  • 57
    • 78650002981 scopus 로고    scopus 로고
    • Transient simulation of delay and switching effects in phase-change memories
    • Lavizzari S, Ielmini D and Lacaita A L 2010 Transient simulation of delay and switching effects in phase-change memories IEEE Trans. Electron Devices 57 3257-64
    • (2010) IEEE Trans. Electron Devices , vol.57 , pp. 3257-3264
    • Lavizzari, S.1    Ielmini, D.2    Lacaita, A.L.3
  • 58
    • 61849099950 scopus 로고    scopus 로고
    • Minimum voltage for threshold switching in nanoscale phase-change memory
    • Yu D, Brittman S, Lee J S, Falk A L and Park H 2008 Minimum voltage for threshold switching in nanoscale phase-change memory Nano Lett. 8 3429-33
    • (2008) Nano Lett. , vol.8 , pp. 3429-3433
    • Yu, D.1    Brittman, S.2    Lee, J.S.3    Falk, A.L.4    Park, H.5
  • 59
    • 79551584518 scopus 로고    scopus 로고
    • Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology
    • Fang L W-W, Zhao R, Yeo E G, Lim K G, Yang H, Shi L P, Chong T C and Yeo Y C 2011 Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology J. Electrochem. Soc. 158 232-8
    • (2011) J. Electrochem. Soc. , vol.158 , pp. 232-238
    • Fang, L.W.-W.1    Zhao, R.2    Yeo, E.G.3    Lim, K.G.4    Yang, H.5    Shi, L.P.6    Chong, T.C.7    Yeo, Y.C.8
  • 60
    • 0001245953 scopus 로고
    • Electronic propoerties of amorphous dielectric films
    • Jonscher A K 1967 Electronic propoerties of amorphous dielectric films Thin Solid Films 1 213-34
    • (1967) Thin Solid Films , vol.1 , pp. 213-234
    • Jonscher, A.K.1
  • 61
    • 0015128382 scopus 로고
    • A consideration of Poole-Frenkel effect on electric conduction in insulators
    • Idea M, Sawa G and Kato S 1971 A consideration of Poole-Frenkel effect on electric conduction in insulators J. Appl. Phys. 42 3737
    • (1971) J. Appl. Phys. , vol.42 , pp. 3737
    • Idea, M.1    Sawa, G.2    Kato, S.3
  • 63
    • 84873684441 scopus 로고    scopus 로고
    • Three-dimensional Poole-Frenkel analytical model for carrier transport in amorphous chalcogenides
    • Beneventi G B, Guarino L, Ferro M and Fantini P 2013 Three-dimensional Poole-Frenkel analytical model for carrier transport in amorphous chalcogenides J. Appl. Phys. 113 044506-10
    • (2013) J. Appl. Phys. , vol.113 , pp. 044506-044510
    • Beneventi, G.B.1    Guarino, L.2    Ferro, M.3    Fantini, P.4


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.