A study on the temperature dependence of the threshold switching characteristics of Ge2 Sb2 Te5

Applied Physics Letters

Volumn 96, Issue 2, 2010, Pages

  Lee, Suyoun ^a   Jeong, Doo Seok ^a   Jeong, Jeung Hyun ^a   Zhe, Wu ^a,b   Park, Young Wook ^a,c   Ahn, Hyung Woo ^a   Cheong, Byung Ki ^a  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea Advanced Institute of Science and Technology (KAIST)   (South Korea)

^c Seoul National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTIC EXPRESSIONS; CHALCOGENIDE MATERIALS; CRITICAL CONDUCTIVITY; DELAY TIME; PHYSICAL MODEL; TEMPERATURE DEPENDENCE; THERMALLY ACTIVATED HOPPING; THRESHOLD SWITCHING; TRANSPORT MECHANISM;

GERMANIUM; TELLURIUM COMPOUNDS; TEMPERATURE DISTRIBUTION;

SWITCHING;

EID: 74549192781     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3275756     Document Type: Article

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