Transient simulation of delay and switching effects in phase-change memories

IEEE Transactions on Electron Devices

Volumn 57, Issue 12, 2010, Pages 3257-3264

  Lavizzari, Simone ^a   Ielmini, Daniele ^b   Lacaita, Andrea L ^b  

^a ST Central R and D Agrate   (Italy)

^b POLITECNICO DI MILANO   (Italy)

Author keywords

Amorphous semiconductors; chalcogenide materials; delay; nonvolatile memory; phase change memory (PCM); switching

Indexed keywords

CELL BEHAVIORS; CHALCOGENIDE MATERIALS; CIRCUIT PARAMETER; DELAY; ENERGY GAIN; IN-CELL; IN-PHASE; NON-VOLATILE MEMORIES; NUMERICAL MODELS; OPERATION SPEED; PARALLEL CAPACITANCE; PARASITICS; POOLE-FRENKEL MODEL; SIMULATION STUDIES; SWITCHING EFFECT; SWITCHING PHENOMENON; SWITCHING TIME; THRESHOLD SWITCHING; TRANSIENT EFFECT; TRANSIENT SIMULATION;

AMORPHOUS SEMICONDUCTORS; SWITCHING;

PHASE CHANGE MEMORY;

EID: 78650002981     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2010.2078822     Document Type: Article

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