Time-resolved analysis of the set process in an electrical phase-change memory device

Applied Physics Letters

Volumn 87, Issue 25, 2005, Pages 1-3

  Kang, Dae Hwan ^a   Cheong, Byung Ki ^a   Jeong, Jeung Hyun ^a   Lee, Taek Sung ^a   Kim, In Ho ^a   Kim, Won Mok ^a   Huh, Joo Youl ^b  

^a Korea Institute of Science and Technology   (South Korea)

^b Korea University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CAPACITANCE; CRYSTALLIZATION; ELECTRIC POTENTIAL; ELECTRIC RESISTANCE; PHASE SHIFTERS; THRESHOLD ELEMENTS; TIME AND MOTION STUDY; WAVEFORM ANALYSIS;

AMORPHOUS PHASE-CHANGE MATERIAL; ELECTRICAL PHASE-CHANGE MEMORY DEVICE; THRESHOLD SWITCHING TIME; TIME-RESOLVED ANALYSIS;

DATA STORAGE EQUIPMENT;

EID: 29144526716     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2149172     Document Type: Article

References (9)

1. M. Gill, T. Lowrey, and J. Park, Digest of Tech. Papers of International Solid-State Circuits Conference (IEEE, San Francisco, CA, 2002), p. 202.
2. A. Redaelli, A. Pirovano, F. Pellizzer, A. L. Lacaita, D. Ielmini, and R. Bez, IEEE Electron Device Lett. 25, 684 (2004).
3. R. G. Neale, D. L. Nelson, and G. E. Moore, Electronics (September 1970), p. 56.
4. D. Adler, M. S. Shur, M. Silver, and S. R. Ovshinsky, J. Appl. Phys. 51, 3289 (1980).
5. K. Nakayama, K. Kojima, Y. Imai, T. Kasai, S. Fukushima, A. Kitagawa, M. Kumeda, Y. Kakimoto, and M. Suzuki, Jpn. J. Appl. Phys., Part 1 42, 404 (2003).
6. A. Pirovano, A. L. Lacaita, A. Benvenuti, F. Pellizzer, and R. Bez, IEEE Trans. Electron Devices 51, 452 (2004).
7. R. Vogel and P. J. Walsh, Appl. Phys. Lett. 14, 216 (1969).
8. G. S. Nadkarni, N. Sankarraman, and S. Radhakrishnan, J. Phys. D 16, 897 (1983).
9. M. Kastner, D. Adler, and H. Fritzsche, Phys. Rev. Lett. 37, 1504 (1976).