Phase change random access memory devices with nickel silicide and platinum silicide electrode contacts for integration with CMOS technology

Journal of the Electrochemical Society

Volumn 158, Issue 3, 2011, Pages

  Fang, Lina Wei Wei ^a   Zhao, Rong ^b   Yeo, Eng Guan ^b   Lim, Kian Guan ^b   Yang, Hongxin ^b   Shi, Luping ^b   Chong, Tow Chong ^c   Yeo, Yee Chia ^a  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b DATA STORAGE INSTITUTE   (Singapore)

^c SINGAPORE UNIVERSITY OF TECHNOLOGY AND DESIGN   (Singapore)

Author keywords

[No Author keywords available]

Indexed keywords

BOTTOM ELECTRODES; CMOS TECHNOLOGY; COMPLEMENTARY METAL-OXIDE-SEMICONDUCTOR TECHNOLOGIES; DRAIN REGION; ELECTRODE CONTACTS; LOW RESET CURRENTS; MEMORY CELL; NICKEL MONOSILICIDE; NICKEL SILICIDE; ORDERS OF MAGNITUDE; PHASE CHANGE RANDOM ACCESS MEMORY; PHASE CHANGE RANDOM ACCESS MEMORY DEVICES; PLATINUM SILICIDES; PROCESS COMPLEXITY; PROGRAMMING CURRENTS; RESISTANCE RATIO; SIMULATION RESULT;

CMOS INTEGRATED CIRCUITS; FIELD EFFECT TRANSISTORS; PLATINUM; RANDOM ACCESS STORAGE; SILICIDES;

PHASE CHANGE MEMORY;

EID: 79551584518     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3529354     Document Type: Article

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