Highly sensitive phototransistors based on two-dimensional GaTe nanosheets with direct bandgap

Nano Research

Volumn 7, Issue 5, 2014, Pages 694-703

  Hu, Pingan ^a   Zhang, Jia ^a   Yoon, Mina ^b   Qiao, Xiao Fen ^c   Zhang, Xin ^c   Feng, Wei ^a   Tan, Pingheng ^c   Zheng, Wei ^a   Liu, Jingjing ^a   Wang, Xiaona ^a   Idrobo, Juan C ^b   Geohegan, David B ^b   Xiao, Kai ^b  

^a HARBIN INSTITUTE OF TECHNOLOGY   (China)

^b OAK RIDGE NATIONAL LABORATORY   (United States)

^c INSTITUTE OF SEMICONDUCTORS   (China)

Author keywords

gallium telluride; nanosheet; photodetector; semiconductor; two dimensional

Indexed keywords

EID: 84900555065     PISSN: 19980124     EISSN: 19980000     Source Type: Journal    
DOI: 10.1007/s12274-014-0430-2     Document Type: Article

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