Scaling of HfO 2 dielectric on CVD graphene

Applied Surface Science

Volumn 294, Issue , 2014, Pages 95-99

  McDonnell, S ^a   Azcatl, A ^a   Mordi, G ^a   Floresca, C ^a   Pirkle, A ^a   Colombo, L ^b   Kim, J ^a   Kim, M ^a   Wallace, R M ^a  

^a The University of Texas at Dallas   (United States)

^b TEXAS INSTRUMENTS   (United States)

Author keywords

Atomic layer deposition; Chemical vapor deposition; Graphene; High k dielectrics; Thin films; X ray photoelectron spectroscopy

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; CARBIDES; DIELECTRIC MATERIALS; GRAPHENE; HAFNIUM OXIDES; HIGH-K DIELECTRIC; THIN FILMS; VACUUM APPLICATIONS; X RAY PHOTOELECTRON SPECTROSCOPY;

ATOMIC LAYER DEPOSITED; E-BEAM DEPOSITION; EXFOLIATED GRAPHENE; GRAPHENE LATTICES; HFO2 DIELECTRIC; REACTIVE E-BEAMS; THICKNESS SCALABILITY; ULTRA-THIN METALS;

CHEMICAL VAPOR DEPOSITION;

EID: 84894076360     PISSN: 01694332     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.apsusc.2013.12.115     Document Type: Letter

References (28)

1. Y.M. Lin, A. Valdes-Garcia, S.J. Han, D.B. Farmer, I. Meric, Y.N. Sun, Y.Q. Wu, C. Dimitrakopoulos, A. Grill, P. Avouris, and K.A. Jenkins Wafer-scale graphene integrated circuit Science 332 2011 1294 1297
2. D.B. Farmer, H.-Y. Chiu, Y.-M. Lin, K.A. Jenkins, F. Xia, and P. Avouris Utilization of a buffered dielectric to achieve high field-effect carrier mobility in graphene transistors Nano Lett. 9 2009 4474 4478
3. 3 dielectric layer deposited by atomic layer deposition for graphene-based nanoelectronics Appl. Phys. Lett. 92 2008 203102
4. 3 by atomic layer deposition Appl. Phys. Lett. 97 2010 082901
5. J.M.P. Alaboson, Q.H. Wang, J.D. Emery, A.L. Lipson, M.J. Bedzyk, J.W. Elam, M.J. Pellin, and M.C. Hersam Seeding atomic layer deposition of high-k dielectrics on epitaxial graphene with organic self-assembled monolayers ACS Nano 5 2011 5223 5232
6. Y.M. Lin, K.A. Jenkins, A. Valdes-Garcia, J.P. Small, D.B. Farmer, and P. Avouris Operation of graphene transistors at gigahertz frequencies Nano Lett. 9 2009 422 426
7. V. Wheeler, N. Garces, L. Nyakiti, R. Myers-Ward, G. Jernigan, J. Culbertson, C. Eddy Jr., and D. Kurt Gaskill Fluorine functionalization of epitaxial graphene for uniform deposition of thin high-dielectrics Carbon 50 2012 2307 2314
8. 2 top dielectric Appl. Phys. Lett. 97 2010 123105
9. H. Cao, Q. Yu, L.A. Jauregui, J. Tian, W. Wu, Z. Liu, R. Jalilian, D.K. Benjamin, Z. Jiang, J. Bao, S.S. Pei, and Y.P. Chen Electronic transport in chemical vapor deposited graphene synthesized on Cu: quantum hall effect and weak localization Appl. Phys. Lett. 96 2010 122106
10. H. Cao, Q. Yu, R. Colby, D. Pandey, C.S. Park, J. Lian, D. Zemlyanov, I. Childres, V. Drachev, E.A. Stach, M. Hussain, H. Li, S.S. Pei, and Y.P. Chen Large-scale graphitic thin films synthesized on Ni and transferred to insulators: structural and electronic properties J. Appl. Phys. 107 2010 044310
11. 3 dielectric Appl. Phys. Lett. 94 2009 062107
12. D.B. Farmer, Y.-M. Lin, and P. Avouris Graphene field-effect transistors with self-aligned gates Appl. Phys. Lett. 97 2010 013103
13. 3 dielectric for graphene field-effect transistors Appl. Phys. Lett. 100 2012 093112
14. L. Colombo, S. Banerjee, S. Kim, and E. Tutuc Establishing a uniformly thin dielectric layer on graphene in a semiconductor device without affecting the properties of graphene United States Patent 819 2012 8707
15. J.A. Robinson, M. LaBella, K.A. Trumbull, X.J. Weng, R. Cavelero, T. Daniels, Z. Hughes, M. Hollander, M. Fanton, and D. Snyder Epitaxial graphene materials integration: effects of dielectric overlayers on structural and electronic properties ACS Nano 4 2010 2667 2672
16. 2 dielectrics on graphite Appl. Phys. Lett. 95 2009 133106
17. 2 gate dielectric with 0.5 nm equivalent oxide thickness Appl. Phys. Lett. 81 2002 1065 1067
18. M.J. Hollander, M. LaBella, Z.R. Hughes, M. Zhu, K.A. Trumbull, R. Cavalero, D.W. Snyder, X.J. Wang, E. Hwang, S. Datta, and J.A. Robinson Enhanced transport and transistor performance with oxide seeded high-kappa gate dielectrics on wafer-scale epitaxial graphene Nano Lett. 11 2011 3601 3607
19. L. Colombo, R.M. Wallace, and R.S. Ruoff Graphene growth and device integration Proceed. IEEE 101 2013 1536 1556
20. 2 Appl. Phys. Lett. 99 2011 122108
21. Y.-C. Lin, C.-C. Lu, C.-H. Yeh, C. Jin, K. Suenaga, and P.-W. Chiu Graphene annealing: how clean can it be? Nano Lett. 12 2011 414 419
22. X.S. Li, W.W. Cai, J.H. An, S. Kim, J. Nah, D.X. Yang, R. Piner, A. Velamakanni, I. Jung, E. Tutuc, S.K. Banerjee, L. Colombo, and R.S. Ruoff Large-area synthesis of high-quality and uniform graphene films on copper foils Science 324 2009 1312 1314
23. J. Chan, A. Venugopal, A. Pirkle, S. McDonnell, D. Hinojos, C.W. Magnuson, R.S. Ruoff, L. Colombo, R.M. Wallace, and E.M. Vogel Reducing extrinsic performance-limiting factors in graphene grown by chemical vapor deposition ACS Nano 6 2012 3224 3229
24. 2 -supported graphene devices Nano Lett. 11 2011 767 771
25. 2 Nano Lett. 7 2007 1643 1648 (Pubitemid 47140438)
26. P. Sivasubramani, J. Kim, M.J. Kim, B.E. Gnade, and R.M. Wallace Effect of composition on the thermal stability of sputter deposited hafnium aluminate and nitrided hafnium aluminate dielectrics on Si (100) J. Appl. Phys. 101 2007 114108
27. A. Herrera-Gomez, A. Hegedus, and P.L. Meissner Chemical depth profile of ultrathin nitrided SiO2 films Appl. Phys. Lett. 81 2002 1014 1016
28. A. Herrera-Gomez, A double Lorentzian line shape for asymmetric photoelectron peaks, http://www.qro.cinvestav.mx/∼aherrera/reportesInternos/ doubleLorentzian.pdf.