Multilayer HfO2/TiO2 gate dielectric engineering of graphene field effect transistors

Applied Physics Letters

Volumn 103, Issue 7, 2013, Pages

  Deen, David A ^a   Champlain, James G ^b   Koester, Steven J ^a  

^a UNIVERSITY OF MINNESOTA   (United States)

^b NAVAL RESEARCH LABORATORY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITED; DEVICE-SCALING; DIELECTRIC ENGINEERING; EQUIVALENT OXIDE THICKNESS; GATE INSULATION; GATE INSULATOR; GATE-LEAKAGE CURRENT; GRAPHENE FIELD-EFFECT TRANSISTORS;

ATOMIC LAYER DEPOSITION; FIELD EFFECT TRANSISTORS; GRAPHENE; HAFNIUM OXIDES; INSULATION; MULTILAYERS; TITANIUM DIOXIDE;

GATE DIELECTRICS;

EID: 84882351122     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4818754     Document Type: Article

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