SCOPUS 정보 검색 플랫폼

Microelectronic Engineering

Volumn 109, Issue , 2013, Pages 117-119

Barrier engineering for double layer CVD graphene tunnel FETs

(5) Roy, T a Hesabi, Z R a Joiner, C A a Fujimoto, A b Vogel, E M a,b

a GEORGIA INSTITUTE OF TECHNOLOGY (United States)

b OSAKA INSTITUTE OF TECHNOLOGY (Japan)

Author keywords

Barrier engineering; Graphene; Tunnel FET

Indexed keywords

ATOMIC LAYER DEPOSITED; BARRIER ENGINEERING; HIGH-K DIELECTRIC; SEEDING LAYERS; SUBTHRESHOLD SWING; TEMPERATURE-DEPENDENT MEASUREMENTS; TUNNEL FET; TUNNEL TRANSISTORS;

ATOMIC LAYER DEPOSITION; FIELD EFFECT TRANSISTORS; GRAPHENE;

TUNNELS;

EID: 84876768656 PISSN: 01679317 EISSN: None Source Type: Journal
DOI: 10.1016/j.mee.2013.02.090 Document Type: Article

Times cited : (8)

References (10)

1
- 77955231284
- F. Schwierz Nature Nanotech. 5 2010 487 496
- (2010) Nature Nanotech. , vol.5 , pp. 487-496
- Schwierz, F.¹

2
- 84857870146
- R.M. Feenstra, D. Jena, and G. Gong J. App. Phys. 111 2012 0437111 0437119
- (2012) J. App. Phys. , vol.111 , pp. 0437111-0437119
- Feenstra, R.M.¹ Jena, D.² Gong, G.³

3
- 84866907077
- D. Reddy, L.F. Register, S.K. Banerjee, in: Proc.70th Annu. Dev. Res. Conf., 2012, pp. 73-74.
- (2012) Proc.70th Annu. Dev. Res. Conf. , pp. 73-74
- Reddy, D.¹ Register, L.F.² Banerjee, S.K.³

4
- 84857567921
- L. Britnell, R.V. Gorbachev, R. Jalil, B.D. Belle, F. Schedin, A. Mischenko, T. Georgiou, M.I. Katsnelson, L. Eaves, S.V. Morozov, N.M.R. Peres, J. Leist, A.K. Geim, K.S. Novoselov, and L.A. Ponomarenko Science 335 2012 947 950
- (2012) Science , vol.335 , pp. 947-950
- Britnell, L.¹ Gorbachev, R.V.² Jalil, R.³ Belle, B.D.⁴ Schedin, F.⁵ Mischenko, A.⁶ Georgiou, T.⁷ Katsnelson, M.I.⁸ Eaves, L.⁹ Morozov, S.V.¹⁰ Peres, N.M.R.¹¹ Leist, J.¹² Geim, A.K.¹³ Novoselov, K.S.¹⁴ Ponomarenko, L.A.¹⁵

5
- 59649089945
- S.K. Banerjee, L.F. Register, E. Tutuc, D. Reddy, and A.H. McDonald IEEE Electron. Dev. Lett. 30 2009 158 160
- (2009) IEEE Electron. Dev. Lett. , vol.30 , pp. 158-160
- Banerjee, S.K.¹ Register, L.F.² Tutuc, E.³ Reddy, D.⁴ McDonald, A.H.⁵

6
- 84860364314
- J. Chan, A. Venugopal, A. Pirkle, S. McDonell, D. Hinojos, C.W. Magnuson, R.S. Ruoff, L. Colombo, R.M. Wallace, and E.M. Vogel ACS Nano 6 2012 3224 3229
- (2012) ACS Nano , vol.6 , pp. 3224-3229
- Chan, J.¹ Venugopal, A.² Pirkle, A.³ McDonell, S.⁴ Hinojos, D.⁵ Magnuson, C.W.⁶ Ruoff, R.S.⁷ Colombo, L.⁸ Wallace, R.M.⁹ Vogel, E.M.¹⁰

7
- 80052078629
- L. Vandelli, A. Padovani, L. Larcher, R.G. Southwick, W.B. Knowlton, and G. Bersuker IEEE Trans. Electron. Dev. 58 2011 2878 2887
- (2011) IEEE Trans. Electron. Dev. , vol.58 , pp. 2878-2887
- Vandelli, L.¹ Padovani, A.² Larcher, L.³ Southwick, R.G.⁴ Knowlton, W.B.⁵ Bersuker, G.⁶

8
- 64549098609
- R.G. Southwick, J. Reed, C. Buu, H. Bui, R. Butler, G. Bersuker, W.B. Knowlton, in: Proc. IEEE Intl. Rel. Workshop, 2008, pp. 48-54.
- (2008) Proc. IEEE Intl. Rel. Workshop , pp. 48-54
- Southwick, R.G.¹ Reed, J.² Buu, C.³ Bui, H.⁴ Butler, R.⁵ Bersuker, G.⁶ Knowlton, W.B.⁷

9
- 84876747040
- K. Xu, C. Zeng, Q. Zhang, P. Ye, K. Wang, C.A. Richter, D. Gundlach, N.V. Nguyen, in: Proc. 70th Annu. Dev. Res Conf., 2012, pp. 1-2.
- (2012) Proc. 70th Annu. Dev. Res Conf. , pp. 1-2
- Xu, K.¹ Zeng, C.² Zhang, Q.³ Ye, P.⁴ Wang, K.⁵ Richter, C.A.⁶ Gundlach, D.⁷ Nguyen, N.V.⁸

10
- 77749254845
- S. Swaminathan, M. Shandalov, Y. Oshima, and P.C. Mcintyre Appl. Phys. Lett. 96 2010 0829041 0829043
- (2010) Appl. Phys. Lett. , vol.96 , pp. 0829041-0829043
- Swaminathan, S.¹ Shandalov, M.² Oshima, Y.³ McIntyre, P.C.⁴

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