Atomic layer deposited HfO2 based metal insulator semiconductor GaN ultraviolet photodetectors

Current Applied Physics

Volumn 14, Issue 12, 2014, Pages 1703-1706

  Kumar, Manoj ^a   Tekcan, Burak ^a   Okyay, Ali Kemal ^a  

^a BILKENT UNIVERSITY   (Turkey)

Author keywords

Atomic layer deposited HfO2; GaN; UV photodetectors

Indexed keywords

ATOMIC LAYER DEPOSITION; ATOMS; DARK CURRENTS; GALLIUM NITRIDE; HAFNIUM OXIDES; III-V SEMICONDUCTORS; INSULATING MATERIALS; INSULATION; METAL INSULATOR BOUNDARIES; MIS DEVICES; PHOTODETECTORS; PHOTONS; SEMICONDUCTOR INSULATOR BOUNDARIES; WIDE BAND GAP SEMICONDUCTORS;

ATOMIC LAYER DEPOSITED; INSULATING LAYERS; METAL-INSULATOR-SEMICONDUCTORS; ORDERS OF MAGNITUDE; PEAK RESPONSIVITY; PHOTODETECTORS (PDS); ULTRA-VIOLET PHOTODETECTORS; UV PHOTODETECTORS;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 84908335205     PISSN: 15671739     EISSN: None     Source Type: Journal    
DOI: 10.1016/j.cap.2014.10.001     Document Type: Article

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