Thin-film-induced index change and channel waveguiding in epitaxial GaN films

Applied Physics Letters

Volumn 77, Issue 12, 2000, Pages 1747-1749

  Kim, Euisong ^a   Lee, Byounghee ^a   Nahhas, Ahmed ^a   Kim, Hong Koo ^a  

^a University of Pittsburgh   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

EID: 0000105779     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1311315     Document Type: Article

References (18)

1. F. Bernardini, V. Fiorentini, and D. Vanderbilt, Phys. Rev. B 56, R10024 (1997).
2. A. D. Bykhovski, B. L. Gelmont, and M. S. Shur, J. Appl. Phys. 81, 6332 (1997).
3. E. T. Yu, G. J. Sullivan, P. M. Asbeck, C. D. Wang, D. Qiao, and S. S. Lau, Appl. Phys. Lett. 71, 2794 (1997).
4. H. S. Kim, J. Y. Lin, H. X. Jiang, W. W. Chow, A. Botchkarev, and H. Morkoc. Appl. Phys. Lett. 73, 3426 (1998).
5. R. D. Underwood, P. Kozodoy, S. Keller, S. P. DenBaars, and U. K. Mishra, Appl. Phys. Lett. 73, 405 (1998).
6. O. Ambacher, J. Smart, J. R. Shealy, N. G. Weimann, K. Chu, M. Murphy, W. J. Schaff, L. F. Eastman, R. Dimitrov, L. Wittmer, M. Stutzmann, W. Rieger, and J. Hilsenbeck, J. Appl. Phys. 85, 3222 (1999).
7. R. Langer, J. Simon, V. Oritz, N. T. Pelekanos, A. Barski, R. Andre, and M. Godlewski, Appl. Phys. Lett. 74, 3827 (1999).
8. The SiN refractive index value is based on our measurement result, which was obtained with a prism coupling method. The GaN refractive index is from T. Kawashima, H. Yoshikawa, S. Adachi, S. Fuke, and K. Ohtsuka, J. Appl. Phys. 82, 3528 (1997).
9. P. A. Kirkby, P. R. Selway, and L. D. Westbrook, J. Appl. Phys. 50, 4567 (1979).
10. B. A. Almashary and H. K. Kim, IEEE Photonics Technol. Lett. 8, 1358 (1996).
11. P. Barrios and H. K. Kim, Appl. Phys. Lett. 73, 1017 (1998).
12. The sputter-deposited SiN films are reported to show a compressive stress of up to 1.5 GPa in the case of on Si substrates: See, for example, K. Matsuzaki, A. Hirabayashi, and M. Saga, J. Electrochem. Soc. 139, 3259 (1992). The thermal expansion coefficients of sapphire and GaN are known to be 2 or 1.5 times larger than that of Si. See, for example, H. Landolt and R. Bornstein, in Numerical Data and Functional Relationship in Science Technology, edited by K. H. Hellwege (Springer, New York, 1982), Vol. 17a, p. 181. Considering this difference we assumed that our SiN films, sputter deposited on GaN/sapphire, have a compressive stress of up to 3 GPa.
13. The sputter-deposited SiN films are reported to show a compressive stress of up to 1.5 GPa in the case of on Si substrates: See, for example, K. Matsuzaki, A. Hirabayashi, and M. Saga, J. Electrochem. Soc. 139, 3259 (1992). The thermal expansion coefficients of sapphire and GaN are known to be 2 or 1.5 times larger than that of Si. See, for example, H. Landolt and R. Bornstein, in Numerical Data and Functional Relationship in Science Technology, edited by K. H. Hellwege (Springer, New York, 1982), Vol. 17a, p. 181. Considering this difference we assumed that our SiN films, sputter deposited on GaN/sapphire, have a compressive stress of up to 3 GPa.
14. K. Kim, W. R. L. Lambrecht, and B. Segall, Phys. Rev. B 53, 16310 (1996).
15. A. S. Barker and M. Ilegems, Phys. Rev. B 7, 743 (1973).
16. H. Landolt and R. Bornstein, in Numerical Data and Functional Relationship in Science and Technology, edited by K. H. Hellwege (Springer, Berlin, 1969). Vol. 2, p. 8.
17. S. Yu. Davydov and S. K. Tikhonov. Semiconductors 31, 698 (1997).
18. X.-C. Long, R. A. Myers, S. R. J. Brueck, R. Ramer, K. Zheng, and S. D. Hersee, Appl. Phys. Lett. 67, 1349 (1995).