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Volumn 77, Issue 12, 2000, Pages 1747-1749

Thin-film-induced index change and channel waveguiding in epitaxial GaN films

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EID: 0000105779     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.1311315     Document Type: Article
Times cited : (10)

References (18)
  • 8
    • 0000969646 scopus 로고    scopus 로고
    • The SiN refractive index value is based on our measurement result, which was obtained with a prism coupling method. The GaN refractive index is from T. Kawashima, H. Yoshikawa, S. Adachi, S. Fuke, and K. Ohtsuka, J. Appl. Phys. 82, 3528 (1997).
    • (1997) J. Appl. Phys. , vol.82 , pp. 3528
    • Kawashima, T.1    Yoshikawa, H.2    Adachi, S.3    Fuke, S.4    Ohtsuka, K.5
  • 12
    • 0026943143 scopus 로고
    • The thermal expansion coefficients of sapphire and GaN are known to be 2 or 1.5 times larger than that of Si
    • The sputter-deposited SiN films are reported to show a compressive stress of up to 1.5 GPa in the case of on Si substrates: See, for example, K. Matsuzaki, A. Hirabayashi, and M. Saga, J. Electrochem. Soc. 139, 3259 (1992). The thermal expansion coefficients of sapphire and GaN are known to be 2 or 1.5 times larger than that of Si. See, for example, H. Landolt and R. Bornstein, in Numerical Data and Functional Relationship in Science Technology, edited by K. H. Hellwege (Springer, New York, 1982), Vol. 17a, p. 181. Considering this difference we assumed that our SiN films, sputter deposited on GaN/sapphire, have a compressive stress of up to 3 GPa.
    • (1992) J. Electrochem. Soc. , vol.139 , pp. 3259
    • Matsuzaki, K.1    Hirabayashi, A.2    Saga, M.3
  • 13
    • 0003395029 scopus 로고
    • edited by K. H. Hellwege Springer, New York, Considering this difference we assumed that our SiN films, sputter deposited on GaN/sapphire, have a compressive stress of up to 3 GPa
    • The sputter-deposited SiN films are reported to show a compressive stress of up to 1.5 GPa in the case of on Si substrates: See, for example, K. Matsuzaki, A. Hirabayashi, and M. Saga, J. Electrochem. Soc. 139, 3259 (1992). The thermal expansion coefficients of sapphire and GaN are known to be 2 or 1.5 times larger than that of Si. See, for example, H. Landolt and R. Bornstein, in Numerical Data and Functional Relationship in Science Technology, edited by K. H. Hellwege (Springer, New York, 1982), Vol. 17a, p. 181. Considering this difference we assumed that our SiN films, sputter deposited on GaN/sapphire, have a compressive stress of up to 3 GPa.
    • (1982) Numerical Data and Functional Relationship in Science Technology , vol.17 A , pp. 181
    • Landolt, H.1    Bornstein, R.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.