Dual-wavelength sensitive AlGaN/GaN metal-insulator-semiconductor- insulator-metal ultraviolet sensor with balanced ultraviolet/visible rejection ratios

Applied Physics Letters

Volumn 103, Issue 11, 2013, Pages

  Lee, Chang Ju ^a   Kwon, Young Jin ^a   Won, Chul Ho ^a   Lee, Jung Hee ^a   Hahm, Sung Ho ^a  

^a Kyungpook National University   (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

CUTOFF WAVELENGTHS; EPITAXIALLY GROWN; METAL-INSULATOR-SEMICONDUCTORS; PHOTO-RESPONSIVE; REJECTION RATIOS; SAPPHIRE SUBSTRATES; SCHOTTKY ELECTRODES; ULTRAVIOLET SENSORS;

MIS DEVICES; SAPPHIRE; SEMICONDUCTOR INSULATOR BOUNDARIES; ULTRAVIOLET DEVICES;

GALLIUM NITRIDE;

EID: 84884247119     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4821133     Document Type: Article

References (22)

1. D. Walker and M. Razeghi, " The development of nitride-based UV photodetectors.," Opto-Electronics Review 8 (1), 25-42 (2000).
2. P. Sandvik, K. Mi, F. Shahedipour, R. McClintock, A. Yasan, P. Kung, and M. Razeghi, J. Cryst. Growth 231, 366 (2001). 10.1016/S0022-0248(01)01467-1
3. K. H. Lee, P. C. Chang, S. J. Chang, and S. L. Wu, Phys. Status Solidi A 209, 579 (2012). 10.1002/pssa.201127545
4. B. Butun, T. Tut, E. Ulker, T. Yelboga, and E. Ozbay, Appl. Phys. Lett. 92, 033507 (2008). 10.1063/1.2837645
5. X. D. Wang, W. D. Hu, X. S. Chen, J. T. Xu, X. Y. Li, and W. Lu, Opt. Quantum Electron. 42, 755 (2011). 10.1007/s11082-011-9473-8
6. T. Tut, T. Yelboga, E. Ulker, and E. Ozbay, Appl. Phys. Lett. 92, 103502 (2008). 10.1063/1.2895643
7. F. Omnès, E. Monroy, E. Muñoz, and J. Reverchon, Proc. SPIE 6473, 64730E (2007). 10.1117/12.705393
8. C. H. Chen, S. J. Chang, Y. K. Su, G. C. Chi, J. Y. Chi, C. A. Chang, J. K. Sheu, and J. F. Chen, IEEE Photon. Technol. Lett. 13, 848 (2001). 10.1109/68.935824
9. Y. K. Su, S. J. Chang, C. H. Chen, J. F. Chen, G. C. Chi, J. K. Sheu, W. C. Lai, and J. M. Tsai, IEEE Sens. J. 2, 366 (2002). 10.1109/JSEN.2002.802240
10. L. S. Chuah, Z. Hassan, and H. A. Hassan, Microelectron. Int. 27, 140 (2010). 10.1108/13565361011061939
11. D. Li, X. Sun, H. Song, Z. Li, H. Jiang, Y. Chen, G. Miao, and B. Shen, Appl. Phys. Lett. 99, 261102 (2011). 10.1063/1.3672030
12. K. You, H. Jiang, D. Li, X. Sun, H. Song, Y. Chen, Z. Li, G. Miao, and H. Liu, Appl. Phys. Lett. 100, 121109 (2012). 10.1063/1.3696025
13. L. D. Bell, N. Tripathi, J. R. Grandusky, V. Jindal, and F. S. Shahedipour-Sandvik, IEEE Sens. J. 8, 724 (2008). 10.1109/JSEN.2008.923180
14. N. Tripathi, L. D. Bell, and F. Shahedipour-Sandvik, J. Appl. Phys. 109, 124508 (2011). 10.1063/1.3599878
15. G. Ariyawansa, M. B. M. Rinzan, M. Alevli, M. Strassburg, N. Dietz, A. G. U. Perera, S. G. Matsik, A. Asghar, I. T. Ferguson, H. Luo, A. Bezinger, and H. C. Liu, Appl. Phys. Lett. 89, 091113 (2006). 10.1063/1.2345226
16. Y. Ngu, M. C. Peckerar, D. Sander, C. R. Eddy, Jr., M. A. Mastro, J. K. Hite, R. T. Holm, R. L. Henry, and A. Tuchman, IEEE Trans. Electron Devices 57, 1224 (2010). 10.1109/TED.2010.2045706
17. C. H. Lin and C. W. Liu, Sensors 10, 8797 (2010). 10.3390/s101008797
18. M. L. Lee, T. S. Mue, F. W. Huang, J. H. Yang, and J. K. Sheu, Opt. Express 19, 12658 (2011). 10.1364/OE.19.012658
19. W. J. Wang, C. X. Shan, H. Zhu, F. Y. Ma, D. Z. Shen, X. W. Fan, and K. L. Choy, J. Phys. D: Appl. Phys. 43, 045102 (2010). 10.1088/0022-3727/43/4/ 045102
20. G. Snider, 1D Poisson (version beta 8j) [computer software], 2007.
21. M. Esposto, S. Krishnamoorthy, D. N. Nath, S. Bajaj, T. H. Hung, and S. Rajan, Appl. Phys. Lett. 99, 133503 (2011). 10.1063/1.3645616
22. R. H. Fowler and L. Nordheim, Proc. R. Soc. London, Ser. A 119, 173 (1928) 10.1098/rspa.1928.0091.