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Applied Physics Letters

Volumn 99, Issue 26, 2011, Pages

Effect of asymmetric Schottky barrier on GaN-based metal-semiconductor- metal ultraviolet detector

(8) Li, Dabing a Sun, Xiaojuan a,b Song, Hang a Li, Zhiming a Jiang, Hong a Chen, Yiren a,b Miao, Guoqing a Shen, Bo c

a CHANGCHUN INSTITUTE OF OPTICS (China)

b UNIVERSITY OF CHINESE ACADEMY OF SCIENCES (China)

c PEKING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

DETECTOR RESPONSE; METAL SEMICONDUCTOR METAL; NEGATIVE BIAS; POSITIVE BIAS; RESPONSIVITY; SCHOTTKY BARRIER DETECTORS; SCHOTTKY BARRIERS; ULTRA-VIOLET; UV DETECTOR;

GALLIUM NITRIDE; METALS; SCHOTTKY BARRIER DIODES;

DETECTORS;

EID: 84862909213 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3672030 Document Type: Article

Times cited : (95)

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