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Journal of Vacuum Science and Technology B:Nanotechnology and Microelectronics

Volumn 29, Issue 5, 2011, Pages

Current transport mechanisms of InGaN metal-insulator-semiconductor photodetectors

(7) Shao, Z G a Chen, D J a Liu, B a Lu, H a Xie, Z L a Zhang, R a Zheng, Y D a

a NANJING UNIVERSITY (China)

Author keywords

[No Author keywords available]

Indexed keywords

ATOMIC LAYER DEPOSITION; CHEMICAL VAPOR DEPOSITION; DIELECTRIC MATERIALS; GALLIUM COMPOUNDS; METAL INSULATOR BOUNDARIES; METALS; MIS DEVICES; PHOTODETECTORS; PHOTOELECTRICITY; PLASMA DEPOSITION; PLASMA ENHANCED CHEMICAL VAPOR DEPOSITION; SEMICONDUCTING SILICON; SEMICONDUCTOR INSULATOR BOUNDARIES; SILICON;

CURRENT TRANSPORT MECHANISM; DENSITY OF TRAP STATE; EXPONENTIAL TRAP DISTRIBUTION; FOWLER-NORDHEIM TUNNELING; INSULATING LAYERS; LEAKAGE CONDUCTION MECHANISM; METAL-INSULATOR-SEMICONDUCTORS; PHOTOGENERATED CARRIERS; PHOTORESPONSES; REJECTION RATIOS; RESPONSIVITY; REVERSE BIAS; SPACE CHARGE LIMITED CURRENTS; TRAP STATE;

VANADIUM;

EID: 80053489423 PISSN: 21662746 EISSN: 21662754 Source Type: Journal
DOI: 10.1116/1.3622298 Document Type: Article

Times cited : (20)

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