AlGaN schottky diodes for detector applications in the UV wavelength range

IEEE Transactions on Electron Devices

Volumn 56, Issue 11, 2009, Pages 2833-2839

  Hellings, Geert ^a,b   John, Joachim ^a   Lorenz, Anne ^a,b   Malinowski, Pawel ^a,b   Mertens, Robert ^a,b  

^a IMEC   (Belgium)

^b UNIVERSITY OF LEUVEN   (Belgium)

Author keywords

Aluminum compounds; Gallium compounds; Photolithography; Schottky barriers; Schottky diodes; Thin surface barrier (TSB) model; Ultraviolet (UV) detectors

Indexed keywords

ALGAN; BARRIER MODEL; DETECTOR SENSITIVITY; DIODE LEAKAGE; EXTREME ULTRAVIOLETS; KEY ISSUES; SCHOTTKY BARRIERS; SCHOTTKY CONTACTS; SCHOTTKY DIODES; TCAD SIMULATION; TECHNOLOGY DEVELOPMENT; THEORETICAL MODELING; THIN-SURFACE-BARRIER (TSB) MODEL; ULTRAVIOLET (UV) DETECTORS; UV WAVELENGTH RANGES;

ALUMINUM; ALUMINUM COMPOUNDS; DETECTORS; DIODES; GALLIUM; GALLIUM COMPOUNDS; LEAKAGE (FLUID); PHOTOLITHOGRAPHY; SIMULATORS; SOLID-STATE SENSORS; SURFACE DEFECTS; TECHNOLOGICAL FORECASTING; ULTRAVIOLET DEVICES;

SCHOTTKY BARRIER DIODES;

EID: 70350702871     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2009.2031025     Document Type: Article

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