Photoresponse study of visible blind GaN/AlGaN p-i-n ultraviolet photodetector

Optical and Quantum Electronics

Volumn 42, Issue 11-13, 2011, Pages 755-764

  Wang, X D ^a   Hu, W D ^a   Chen, X S ^a   Xu, J T ^a   Li, X Y ^a   Lu, W ^a  

^a SHANGHAI INSTITUTE OF TECHNICAL PHYSICS   (China)

Author keywords

GaN based ultraviolet photodetector; Photoresponse; Rejection ratio; Visible blind

Indexed keywords

ABSORPTION LAYER; AUGER RECOMBINATION; DOPING CONCENTRATION; EFFECT OF DOPING; MOBILITY DEGRADATION; PEAK VALUES; PHOTORESPONSES; REJECTION RATIOS; SHORT-WAVELENGTH; SPECTRAL RESPONSIVITY; ULTRA-VIOLET PHOTODETECTORS; VISIBLE BLIND;

ABSORPTION; GALLIUM NITRIDE; OPTOELECTRONIC DEVICES;

PHOTODETECTORS;

EID: 80755189916     PISSN: 03068919     EISSN: 1572817X     Source Type: Journal    
DOI: 10.1007/s11082-011-9473-8     Document Type: Conference Paper

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