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Japanese Journal of Applied Physics

Volumn 52, Issue 8 PART 2, 2013, Pages

GaN-Based metal-insulator-semiconductor ultraviolet photodetectors with HfO2 insulators

(1) Chen, Chin Hsiang a

a CHENG SHIU UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CONTRAST RATIO; DETECTIVITY; INSULATING LAYERS; METAL-INSULATOR-SEMICONDUCTORS; NOISE EQUIVALENT POWER; PHOTODETECTORS (PDS); ULTRA-VIOLET; ULTRA-VIOLET PHOTODETECTORS;

INSULATING MATERIALS; MIS DEVICES; NITRIDES; PHOTODETECTORS; PHOTONS;

HAFNIUM OXIDES;

EID: 84883204813 PISSN: 00214922 EISSN: 13474065 Source Type: Journal
DOI: 10.7567/JJAP.52.08JF08 Document Type: Article

Times cited : (21)

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