Nanowire field effect transistors in optoelectronics

Nanowire Field Effect Transistors: Principles and Applications

Volumn 9781461481249, Issue , 2014, Pages 187-224

  Shaygan, Mehrdad ^a   Meyyappan, M ^b   Lee, Jeong Soo ^a  

^a Pohang University of Science and Technology (POSTECH)   (South Korea)

^b NASA AMES RESEARCH CENTER   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

COPPER OXIDES; EFFICIENCY; FIELD EFFECT TRANSISTORS; GALLIUM COMPOUNDS; II-VI SEMICONDUCTORS; INDIUM COMPOUNDS; LIGHT ABSORPTION; NANORODS; NANOWIRES; OHMIC CONTACTS; PHOTONIC DEVICES; PHOTONS; SELENIUM COMPOUNDS; SULFUR COMPOUNDS; THRESHOLD VOLTAGE; TIN OXIDES; YARN; ZINC OXIDE;

1D NANOSTRUCTURES; CARBON NANOBELTS; CARBON NANOWIRE; CARRIERS TRANSPORT; FIELD-EFFECT TRANSISTOR; NANOWIRE FET; OPTOELECTRONIC CIRCUITS; PHOTONICS DEVICES; PROCESS COMPLEXITY; WAVELENGTH OF LIGHT;

PHOTODETECTORS;

EID: 84907490249     PISSN: None     EISSN: None     Source Type: Book    
DOI: 10.1007/978-1-4614-8124-9_8     Document Type: Chapter

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