Photocurrent of undoped, n- and p-type Si nanowires synthesized by thermal chemical vapor deposition

Japanese Journal of Applied Physics, Part 1: Regular Papers and Short Notes and Review Papers

Volumn 45, Issue 5 A, 2006, Pages 4265-4269

  Kim, Kyung Hwan ^a   Keem, Kihyun ^a   Jeong, Dong Young ^a   Min, Byungdon ^a   Cho, Kyoungah ^a   Kim, Hyunsuk ^a   Moon, Byung Moo ^a   Noh, Taeyong ^b   Park, Jucheol ^b   Suh, Minchul ^c   Kim, Sangsig ^a  

^a Korea University   (South Korea)

^b Samsung Advanced Institute of Technology (SAIT)   (South Korea)

^c Samsung SDI   (South Korea)

Author keywords

n type; p type; Photocurrent; Si nanowires; Undoped

Indexed keywords

CHEMICAL VAPOR DEPOSITION; LIGHT; NANOSTRUCTURED MATERIALS; SILICON;

N-TYPE; P-TYPE; PHOTOCURRENT; SI NANOWIRES; UNDOPED;

PHOTOCURRENTS;

EID: 33646864307     PISSN: 00214922     EISSN: 13474065     Source Type: Journal    
DOI: 10.1143/JJAP.45.4265     Document Type: Article

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