Quantitative measurement of the electron and hole mobility-lifetime products in semiconductor nanowires

Nano Letters

Volumn 6, Issue 5, 2006, Pages 948-952

  Gu, Yi ^a   Romankiewicz, John P ^a   David, John K ^a   Lensch, Jessica L ^a   Lauhon, Lincoln J ^a  

^a Northwestern University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

PHOTOCURRENT MAPPING; SCANNING PHOTOCURRENT MICROSCOPY; SEMICONDUCTOR NANOSTRUCTURES; SPATIAL PROFILES;

ELECTRON MOBILITY; ELECTRON TRANSPORT PROPERTIES; HOLE MOBILITY; ION BOMBARDMENT; MICROSCOPIC EXAMINATION; OHMIC CONTACTS; PHOTOCONDUCTIVITY; PHOTOCURRENTS; SEMICONDUCTOR MATERIALS;

NANOSTRUCTURED MATERIALS;

EID: 33744811719     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl052576y     Document Type: Article

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