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Volumn 95, Issue 16, 2009, Pages

High-gain photoconductivity in semiconducting InN nanowires

(8) Chen, Reui San a Yang, Tsang Ho b,c Chen, Hsin Yi c Chen, Li Chyong c Chen, Kuei Hsien a,c Yang, Ying Jay c Su, Chun Hsi b Lin, Chii Ruey b

a INSTITUTE OF ATOMIC AND MOLECULAR SCIENCES (Taiwan)

b NATIONAL TAIPEI UNIVERSITY OF TECHNOLOGY (Taiwan)

c NATIONAL TAIWAN UNIVERSITY (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

BAND-GAP NITRIDES; DARK CONDUCTIVITY; HIGH-GAIN; INDIUM NITRIDE; INN NANOWIRES; PHOTOCONDUCTIVE GAINS; ROOM TEMPERATURE; TEMPERATURE DEPENDENT; TRANSPORT BEHAVIOR;

ELECTRIC WIRE; NITRIDES; PHOTOCONDUCTIVITY;

NANOWIRES;

EID: 70350431288 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3242023 Document Type: Article

Times cited : (56)

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