High-performance single CdS nanobelt metal-semiconductor field-effect transistor-based photodetectors

ACS Applied Materials and Interfaces

Volumn 2, Issue 10, 2010, Pages 2724-2727

  Ye, Yu ^a   Dai, Lun ^a   Wen, Xiaonan ^a   Wu, Peicai ^a   Pen, Ruomin ^a   Qin, Guogang ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

CdS; MESFET; nanobelts; photodetector

Indexed keywords

BEST VALUE; CDS; CDS NANOBELTS; DECAY TIME; EXTERNAL QUANTUM EFFICIENCY; GATE BIAS; GATE VOLTAGES; HIGH CURRENTS; MESFET; MESFETS; PHOTORESPONSES; RESPONSIVITY; SEMICONDUCTOR FIELD-EFFECT TRANSISTORS; SEMICONDUCTOR NANOMATERIALS; WORKING PRINCIPLES;

CADMIUM COMPOUNDS; CADMIUM SULFIDE; FIELD EFFECT TRANSISTORS; MESFET DEVICES; NANOBELTS; PHOTODETECTORS;

OPTOELECTRONIC DEVICES;

EID: 79151468939     PISSN: 19448244     EISSN: 19448252     Source Type: Journal    
DOI: 10.1021/am100661x     Document Type: Article

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