Photocurrent and photoconductance properties of a GaAs nanowire

Applied Physics Letters

Volumn 95, Issue 8, 2009, Pages

  Thunich, S ^a   Prechtel, L ^a   Spirkoska, D ^a   Abstreiter, G ^a   Fontcuberta I Morral, A ^a,b   Holleitner, A W ^a  

^a WALTER SCHOTTKY INSTITUT   (Germany)

^b EPFL   (Switzerland)

Author keywords

[No Author keywords available]

Indexed keywords

GAAS; LASER FIELDS; METAL SOURCES; PHOTOCONDUCTANCE; PHOTOCONDUCTANCE SIGNALS; SCHOTTKY CONTACTS;

CHEMICAL MODIFICATION; CRYSTAL GROWTH; ELECTRIC WIRE; GALLIUM ALLOYS; MOLECULAR BEAMS; MOLECULAR DYNAMICS; OPTOELECTRONIC DEVICES; PHOSPHORUS; PHOTOCURRENTS; POLARIZATION; SEMICONDUCTING GALLIUM;

NANOWIRES;

EID: 69549110180     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3193540     Document Type: Article

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31. h = 102 is smaller than the number Nphoton of absorbed photons per cycle, which can be estimated as Nphoton = Ilaser A α d/ (Ephoton fchop) =30 μW/ cm2 × (2.8× 10-9 cm2) ×0.014/ (1.7 eV×930 Hz) ≈ 105, with A the illuminated area of the wire, d its thickness, and α the absorption coefficient of GaAs, thus enabling the discussed photodoping effect.