Gate tunable photoconductivity of p -channel Se nanowire field effect transistors

Applied Physics Letters

Volumn 95, Issue 9, 2009, Pages

  Liao, Zhi Min ^a   Hou, Chong ^a   Zhao, Qing ^a   Liu, Li Ping ^b   Yu, Da Peng ^a  

^a PEKING UNIVERSITY   (China)

^b TSINGHUA UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

GATE VOLTAGES; ON/OFF RATIO; P-TYPE; PHOTO-ELECTRICAL PROPERTIES;

NANOWIRES; SELENIUM;

FIELD EFFECT TRANSISTORS;

EID: 69949187049     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.3216846     Document Type: Article

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