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Applied Physics Letters

Volumn 95, Issue 4, 2009, Pages

Photoconductance of aligned SnO2 nanowire field effect transistors

(7) Kim, Daeil a Kim, Yong Kwan a Park, Sung Chan a Ha, Jeong Sook a Huh, Junghwan a Na, Junhong a Kim, Gyu Tae a

a Korea University (South Korea)

Author keywords

[No Author keywords available]

Indexed keywords

DARK-CURRENTS; GATE VOLTAGES; HIGH SENSITIVITY; OPTOELECTRONIC PROPERTIES; PHOTOCONDUCTANCE; PHOTOCURRENT MEASUREMENT; UV DETECTOR; UV LIGHT; UV PHOTOSENSITIVITY; WELL-ALIGNED;

DYNAMIC RESPONSE; ELECTRIC POTENTIAL; MESFET DEVICES; NANOWIRES; PHOTOCURRENTS;

FIELD EFFECT TRANSISTORS;

EID: 68249110641 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3190196 Document Type: Article

Times cited : (48)

References (24)

1
- 1642569233
- Large-scale hexagonal-patterned growth of aligned ZnO nanorods for nano-optoelectronics and nanosensor arrays
- DOI 10.1021/nl035102c
- X. Wang, C. J. Summers, and I. L. Wang, Nano Lett. 1530-6984 4, 423 (2004). 10.1021/nl035102c (Pubitemid 38402626)
- (2004) Nano Letters , vol.4 , Issue.3 , pp. 423-426
- Wang, X.¹ Summers, C.J.² Wang, Z.L.³

2
- 52349112314
- 0003-6951,. 10.1063/1.2987422
- C. H. Lin, R. S. Chen, T. T. Chen, H. Y. Chen, Y. F. Chen, K. H. Chen, and L. C. Chen, Appl. Phys. Lett. 0003-6951 93, 112115 (2008). 10.1063/1.2987422
- (2008) Appl. Phys. Lett. , vol.93 , pp. 112115
- Lin, C.H.¹ Chen, R.S.² Chen, T.T.³ Chen, H.Y.⁴ Chen, Y.F.⁵ Chen, K.H.⁶ Chen, L.C.⁷

3
- 33749267782
- Single-crystal CdSe nanoribbon field-effect transistors and photoelectric applications
- DOI 10.1063/1.2345255
- J. S. Jie, W. J. Zhang, Y. Jiang, and S. T. Lee, Appl. Phys. Lett. 0003-6951 89, 133118 (2006). 10.1063/1.2345255 (Pubitemid 44484151)
- (2006) Applied Physics Letters , vol.89 , Issue.13 , pp. 133118
- Jie, J.S.¹ Zhang, W.J.² Jiang, Y.³ Lee, S.T.⁴

4
- 0035831290
- Nanobelts of semiconducting oxides
- DOI 10.1126/science.1058120
- Z. W. Pan, Z. R. Dai, and Z. L. Wang, Science 0036-8075 291, 1947 (2001). 10.1126/science.1058120 (Pubitemid 32216991)
- (2001) Science , vol.291 , Issue.5510 , pp. 1947-1949
- Zheng Wei Pan¹ Zu Rong Dai² Zhong Lin Wang³

5
- 0037461671
- 1089-5647,. 10.1021/jp0271054
- M. S. Arnold, P. Avouris, Z. W. Pan, and Z. L. Wang, J. Phys. Chem. B 1089-5647 107, 659 (2003). 10.1021/jp0271054
- (2003) J. Phys. Chem. B , vol.107 , pp. 659
- Arnold, M.S.¹ Avouris, P.² Pan, Z.W.³ Wang, Z.L.⁴

6
- 18144377436
- 2 nanowires and nanobelts functionalized with Pd catalyst particles
- DOI 10.1021/nl050082v
- A. Kolmakov, D. O. Klenov, Y. Lilach, S. Stemmer, and M. Moskovits, Nano Lett. 1530-6984 5, 667 (2005). 10.1021/nl050082v (Pubitemid 40609738)
- (2005) Nano Letters , vol.5 , Issue.4 , pp. 667-673
- Kolmakov, A.¹ Klenov, D.O.² Lilach, Y.³ Stemmer, S.⁴ Moskovitst, M.⁵

7
- 1942445309
- 0009-2614,. 10.1016/j.cplett.2004.03.083
- S. Han, W. Jin, D. H. Zhang, T. Tang, C. Li, X. Liu, Z. Liu, B. Lei, and C. Zhou, Chem. Phys. Lett. 0009-2614 389, 176 (2004). 10.1016/j.cplett.2004.03. 083
- (2004) Chem. Phys. Lett. , vol.389 , pp. 176
- Han, S.¹ Jin, W.² Zhang, D.H.³ Tang, T.⁴ Li, C.⁵ Liu, X.⁶ Liu, Z.⁷ Lei, B.⁸ Zhou, C.⁹

8
- 44949102206
- Fabrication of slantingly-aligned silicon nanowire arrays for solar cell applications
- DOI 10.1088/0957-4484/19/25/255703, PII S0957448408716908
- H. Fang, X. D. Li, S. Song, Y. Xu, and J. Zhu, Nanotechnology 0957-4484 19, 255703 (2008). 10.1088/0957-4484/19/25/255703 (Pubitemid 351813712)
- (2008) Nanotechnology , vol.19 , Issue.25 , pp. 255703
- Fang, H.¹ Li, X.² Song, S.³ Xu, Y.⁴ Zhu, J.⁵

9
- 61649123298
- 1530-6984,. 10.1021/nl801696b
- Y. Cheng, P. Xiong, C. S. Yun, G. F. Strouse, J. P. Zheng, R. S. Yang, and Z. L. Wang, Nano Lett. 1530-6984 8, 4179 (2008). 10.1021/nl801696b
- (2008) Nano Lett. , vol.8 , pp. 4179
- Cheng, Y.¹ Xiong, P.² Yun, C.S.³ Strouse, G.F.⁴ Zheng, J.P.⁵ Yang, R.S.⁶ Wang, Z.L.⁷

10
- 34248360702
- High-performance electronics using dense, perfectly aligned arrays of single-walled carbon nanotubes
- DOI 10.1038/nnano.2007.77, PII NNANO200777
- S. J. Kang, C. Kocabas, T. Ozel, M. Shim, N. Pimparkar, M. A. Alam, S. V. Rotkin, and J. A. Rogers, Nat. Nanotechnol. 1748-3387 2, 230 (2007). 10.1038/nnano.2007.77 (Pubitemid 46739814)
- (2007) Nature Nanotechnology , vol.2 , Issue.4 , pp. 230-236
- Kang, S.J.¹ Kocabas, C.² Ozel, T.³ Shim, M.⁴ Pimparkar, N.⁵ Alam, M.A.⁶ Rotkin, S.V.⁷ Rogers, J.A.⁸

11
- 45749097006
- 0003-6951,. 10.1063/1.2947586
- S. Ju, P. Chen, C. Zhou, Y. G. Ha, A. Facchetti, T. J. Marks, S. K. Kim, S. Mohammadi, and D. B. Janes, Appl. Phys. Lett. 0003-6951 92, 243120 (2008). 10.1063/1.2947586
- (2008) Appl. Phys. Lett. , vol.92 , pp. 243120
- Ju, S.¹ Chen, P.² Zhou, C.³ Ha, Y.G.⁴ Facchetti, A.⁵ Marks, T.J.⁶ Kim, S.K.⁷ Mohammadi, S.⁸ Janes, D.B.⁹

12
- 2942611140
- 0022-0248,. 10.1016/j.jcrysgro.2004.03.030
- J. S. Lee, S. K. Sim, B. Min, K. Cho, S. W. Kim, and S. Kim, J. Cryst. Growth 0022-0248 267, 145 (2004). 10.1016/j.jcrysgro.2004.03.030
- (2004) J. Cryst. Growth , vol.267 , pp. 145
- Lee, J.S.¹ Sim, S.K.² Min, B.³ Cho, K.⁴ Kim, S.W.⁵ Kim, S.⁶

13
- 0038380565
- 0935-9648,. 10.1002/adma.200304889
- A. Kolmakov, Y. Zhang, G. Cheng, and M. Moskovits, Adv. Mater. (Weinheim, Ger.) 0935-9648 15, 997 (2003). 10.1002/adma.200304889
- (2003) Adv. Mater. (Weinheim, Ger.) , vol.15 , pp. 997
- Kolmakov, A.¹ Zhang, Y.² Cheng, G.³ Moskovits, M.⁴

14
- 42549136017
- 2 nanowire gas sensor with high sensitivity
- DOI 10.1088/0957-4484/19/9/095508, PII S0957448408605632
- Y. J. Choi, I. S. Hwang, J. G. Park, K. J. Choi, J. H. Park, and J. H. Lee, Nanotechnology 0957-4484 19, 095508 (2008). 10.1088/0957-4484/19/9/095508 (Pubitemid 351588346)
- (2008) Nanotechnology , vol.19 , Issue.9 , pp. 095508
- Choi, Y.-J.¹ Hwang, I.-S.² Park, J.-G.³ Choi, K.J.⁴ Park, J.-H.⁵ Lee, J.-H.⁶

15
- 68249126051
- JCPDS Card No. 21-1250.
- JCPDS Card No. 21-1250.

16
- 38749136202
- Wafer-scale assembly of highly ordered semiconductor nanowire arrays by contact printing
- DOI 10.1021/nl071626r
- Z. Fan, J. C. Ho, Z. A. Jacobson, R. Yerushalmi, R. L. Alley, H. Razavi, and A. Javey, Nano Lett. 1530-6984 8, 20 (2008). 10.1021/nl071626r (Pubitemid 351177769)
- (2008) Nano Letters , vol.8 , Issue.1 , pp. 20-25
- Fan, Z.¹ Ho, J.C.² Jacobson, Z.A.³ Yerushalmi, R.⁴ Alley, R.L.⁵ Razavi, H.⁶ Javey, A.⁷

17
- 49649084977
- 0027-8424,. 10.1073/pnas.0801994105
- Z. Y. Fan, J. C. Ho, Z. A. Jacobson, H. Razavi, and A. Javey, Proc. Natl. Acad. Sci. U.S.A. 0027-8424 105, 11066 (2008). 10.1073/pnas.0801994105
- (2008) Proc. Natl. Acad. Sci. U.S.A. , vol.105 , pp. 11066
- Fan, Z.Y.¹ Ho, J.C.² Jacobson, Z.A.³ Razavi, H.⁴ Javey, A.⁵

18
- 0035943358
- Highly polarized photoluminescence and photodetection from single indium phosphide nanowires
- DOI 10.1126/science.1062340
- J. F. Wang, M. S. Gudiksen, X. F. Duan, Y. Cui, and C. M. Lieber, Science 0036-8075 293, 1455 (2001). 10.1126/science.1062340 (Pubitemid 32801542)
- (2001) Science , vol.293 , Issue.5534 , pp. 1455-1457
- Wang, J.¹ Gudiksen, M.S.² Duan, X.³ Cui, Y.⁴ Lieber, C.M.⁵

19
- 36248932227
- Polarization-sensitive nanowire photodetectors based on solution-synthesized CdSe quantum-wire solids
- DOI 10.1021/nl0713023
- A. Singh, X. Li, V. Protasenko, G. Galantai, M. Kuno, H. G. Xing, and D. Jena, Nano Lett. 1530-6984 7, 2999 (2007). 10.1021/nl0713023 (Pubitemid 350132919)
- (2007) Nano Letters , vol.7 , Issue.10 , pp. 2999-3006
- Singh, A.¹ Li, X.² Protasenko, V.³ Galantai, G.⁴ Kuno, M.⁵ Xing, H.⁶ Jena, D.⁷

20
- 0242440211
- 0935-9648,. 10.1002/adma.200305439
- Z. Liu, D. Zhang, S. Han, C. Li, T. Tang, W. Jin, X. Liu, B. Lei, and C. Zhou, Adv. Mater. (Weinheim, Ger.) 0935-9648 15, 1754 (2003). 10.1002/adma.200305439
- (2003) Adv. Mater. (Weinheim, Ger.) , vol.15 , pp. 1754
- Liu, Z.¹ Zhang, D.² Han, S.³ Li, C.⁴ Tang, T.⁵ Jin, W.⁶ Liu, X.⁷ Lei, B.⁸ Zhou, C.⁹

21
- 34548173027
- 2 nanowires
- DOI 10.1021/nl0712217
- E. N. Dattoli, Q. Wan, W. Guo, Y. Chen, X. Pan, and W. Lu, Nano Lett. 1530-6984 7, 2463 (2007). 10.1021/nl0712217 (Pubitemid 47310146)
- (2007) Nano Letters , vol.7 , Issue.8 , pp. 2463-2469
- Dattoli, E.N.¹ Wan, Q.² Guo, W.³ Chen, Y.⁴ Pan, X.⁵ Lu, W.⁶

22
- 33747839682
- Gate capacitance of back-gated nanowire field-effect transistors
- DOI 10.1063/1.2337853
- O. Wunnicke, Appl. Phys. Lett. 0003-6951 89, 083102 (2006). 10.1063/1.2337853 (Pubitemid 44286169)
- (2006) Applied Physics Letters , vol.89 , Issue.8 , pp. 083102
- Wunnicke, O.¹

23
- 68249085175
- i is the real channel length along each NW. After differentiating by Vgs and dividing the right term, the mobility can be obtained as in Eq.
- i is the real channel length along each NW. After differentiating by Vgs and dividing the right term, the mobility can be obtained as in Eq.

24
- 58149248060
- 0957-4484,. 10.1088/0957-4484/19/46/465501
- J. D. Prades, F. H. Ramirez, R. J. Diaz, M. Manzanares, T. Andreu, A. Cirera, A. R. Rodriguez, and J. R. Morante, Nanotechnology 0957-4484 19, 465501 (2008). 10.1088/0957-4484/19/46/465501
- (2008) Nanotechnology , vol.19 , pp. 465501
- Prades, J.D.¹ Ramirez, F.H.² Diaz, R.J.³ Manzanares, M.⁴ Andreu, T.⁵ Cirera, A.⁶ Rodriguez, A.R.⁷ Morante, J.R.⁸

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