Efficient visible light detection using individual germanium nanowire field effect transistors

Applied Physics Letters

Volumn 91, Issue 16, 2007, Pages

  Ahn, Y H ^a   Park, Jiwoong ^b,c  

^a Ajou University   (South Korea)

^b HARVARD UNIVERSITY   (United States)

^c Department of Obstetrics Gynecology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

GERMANIUM NANOWIRE FIELD EFFECT TRANSISTORS (GEFET); GLOBAL ILLUMINATION; SATURATION BEHAVIOR; VISIBLE LIGHT DETECTION;

GAIN MEASUREMENT; LIGHT POLARIZATION; NANOWIRES; PHOTOCURRENTS; PHOTODETECTORS; SEMICONDUCTING GERMANIUM;

FIELD EFFECT TRANSISTORS;

EID: 35548943992     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2799253     Document Type: Article

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