ZnSe nanowire photodetector prepared on oxidized silicon substrate by molecular-beam epitaxy

Journal of the Electrochemical Society

Volumn 156, Issue 4, 2009, Pages

  Hsiao, C H ^a   Chang, S J ^a   Wang, S B ^a   Chang, S P ^a   Li, T C ^b   Lin, W J ^b   Ko, C H ^c   Kuan, T M ^c   Huang, B R ^d  

^a NATIONAL CHENG KUNG UNIVERSITY   (Taiwan)

^b CHUNG SHAN INSTITUTE OF SCIENCE AND TECHNOLOGY   (Taiwan)

^c TAIWAN SEMICONDUCTOR MANUFACTURING COMPANY   (Taiwan)

^d NATIONAL TAIWAN UNIVERSITY OF SCIENCE AND TECHNOLOGY   (Taiwan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; ELECTRIC WIRE; GOLD; MOLECULAR BEAMS; NANOWIRES; OPTOELECTRONIC DEVICES; PHOTODETECTORS; SEMICONDUCTING SILICON COMPOUNDS; ZINC;

APPLIED BIAS; AU FILMS; AVERAGE DIAMETERS; AVERAGE LENGTHS; CONTRAST RATIOS; MOLECULAR-BEAM EPITAXIES; OXIDIZED SILICON SUBSTRATES; PURE ZINCS; SHADOW MASKS; SI SUBSTRATES; UV PHOTODETECTORS; ZNSE NANOWIRES;

SEMICONDUCTING ZINC COMPOUNDS;

EID: 61349087984     PISSN: 00134651     EISSN: None     Source Type: Journal    
DOI: 10.1149/1.3077580     Document Type: Article

References (24)

1. H. C. Lee, T. Abe, N. Kaneko, M. Adachi, M. Watanabe, Y. Fujita, H. Kasada, and K. Ando, Jpn. J. Appl. Phys., Part 1, 41, 1359 (2002).
2. S. Ito, K. Nakano, and A. Ishibashi, J. Cryst. Growth, 214, 1029 (2000).
3. W. R. Chen, S. J. Chang, Y. K. Su, J. F. Chen, W. H. Lan, W. J. Lin, Y. T. Cherng, C. H. Liu, and U. H. Liaw, IEEE Photonics Technol. Lett., 14, 1061 (2002).
4. K. Katayama, H. Matsubara, F. Nakanishi, T. Nakamura, H. Doi, A. Saegusa, T. Mitsui, T. Matsuoka, M. Irikusa, T. Takebe, J. Cryst. Growth, 214, 1064 (2000).
5. H. Okuyama, IEICE Trans. Electron., E83C, 536 (2000).
6. S. J. Chang, Y. K. Su, W. R. Chen, W. H. Lan, W. J. Lin, Y. T. Cheng, C. H. Liu, and U. H. Liaw, IEEE Photonics Technol. Lett., 14, 180 (2002).
7. J. D. Holmes, K. P. Johnston, R. C. Doty, and B. A. Korgel, Science, 287, 1471 (2000).
8. M. S. Gudiksen, L. J. Lauhon, J. Wang, D. C. Smith, and C. M. Lieber, Nature (London), 415, 617 (2002).
9. T. W. Zhang, Y. Q. Shen, W. Hu, J. Sun, J. Wu, Z. F. Ying, and N. Xu, J. Vac. Sci. Technol. B, 25, 1823 (2007).
10. X. T. Zhang, Z. Liu, Y. P. Leung, Q. Li, and S. K. Hark, Appl. Phys. Lett., 83, 5533 (2003).
11. B. Xiang, H. Z. Zhang, G. H. Li, F. H. Yang, F. H. Su, R. M. Wang, J. Xu, G. W. Lu, X. C. Sun, Q. Zhao, and D. P. Yu, Appl. Phys. Lett., 82, 3330 (2003).
12. T. Aichele, A. Tribu, C. Bougerol, K. Kheng, R. Andre, and S. Tatarenko, Appl. Phys. Lett., 93, 143106 (2008).
13. J. Basu, R. Divakar, J. Nowak, S. Hofmann, A. Colli, A. Franciosi, and C. B. Carter, J. Appl. Phys., 104, 064302 (2008).
14. S. Hofmann, C. Ducati, R. J. Neill, S. Piscanec, A. C. Ferrari, J. Geng, R. E. Dunin-Borkowski, and J. Robertson, J. Appl. Phys., 94, 6005 (2003).
15. F. F. Wang, Z. H. Zhang, R. B. Liu, X. Wang, X. Zhu, A. L. Pan, and B. S. Zou, Nanotechnology, 18, 305705 (2007).
16. H. Z. Fu, H. Y. Li, W. Q. Jie, and L. Yang, J. Cryst. Growth, 289, 440 (2006).
17. L. E. Greene, M. Law, J. Goldberger, F. Kim, J. C. Johnson, Y. F. Zhang, R. J. Saykally, and P. D. Yang, Angew. Chem., Int. Ed., 42, 3031 (2003).
18. C. F. Guo, C. H. Choy, D. X. Huang, and Y. P. Fang, J. Phys. Chem. Solids, 67, 818 (2006).
19. J. I. Pankove, Optical Processes in Semiconductors, Dover, New York (1975).
20. Y. P. Varshni, Physica (Amsterdam), 34, 149 (1967).
21. X. T. Zhang, K. N. Ip, Q. Li, and S. K. Hark, Appl. Phys. Lett., 86, 203114 (2005).
22. H. Hong and W. A. Anderson, IEEE Trans. Electron Devices, 46, 1127 (1999).
23. C. L. Hsu, S. J. Chang, Y. R. Lin, P. C. Li, T. S. Lin, S. Y. Tsai, T. H. Lu, and I. C. Chen, Chem. Phys. Lett., 416, 75 (2005).
24. T. K. Lin, S. J. Chang, Y. K. Su, Y. Z. Chiou, C. K. Wang, C. M. Chang, and B. R. Huang, IEEE Trans. Electron Devices, 52, 121 (2005).