Scanning photocurrent imaging and electronic band studies in silicon nanowire field effect transistors

Nano Letters

Volumn 5, Issue 7, 2005, Pages 1367-1370

  Ahn, Yeonghwan ^a   Dunning, James ^a   Park, Jiwoong ^a  

^a HARVARD UNIVERSITY   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

BAND FLATTENING; ENERGY BAND; NANOSCALE DEVICES; OPTICAL SCANNING MEASUREMENT;

ANISOTROPY; ELECTRIC CONDUCTANCE; FIELD EFFECT TRANSISTORS; PHOTOCURRENTS; SCHOTTKY BARRIER DIODES; SILICON;

NANOSTRUCTURED MATERIALS;

NANOMATERIAL; SILICON;

ARTICLE; CHEMISTRY; CONFOCAL MICROSCOPY; ELECTRIC CONDUCTIVITY; ELECTRICITY; ELECTROCHEMISTRY; EQUIPMENT; EVALUATION; INSTRUMENTATION; LIGHT; MATERIALS TESTING; METHODOLOGY; PHOTOCHEMISTRY; RADIATION EXPOSURE; SEMICONDUCTOR;

ELECTRIC CONDUCTIVITY; ELECTRIC WIRING; ELECTROCHEMISTRY; EQUIPMENT FAILURE ANALYSIS; LIGHT; MATERIALS TESTING; MICROSCOPY, CONFOCAL; NANOSTRUCTURES; PHOTOCHEMISTRY; SILICON; TRANSISTORS;

EID: 23144434345     PISSN: 15306984     EISSN: None     Source Type: Journal    
DOI: 10.1021/nl050631x     Document Type: Article

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