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Volumn 31, Issue 8, 2014, Pages

Photoluminescence of nanoporous GaN films prepared by electrochemical etching

(8) Wang, Qiang a,b Ji, Zi Wu a Xiao, Hong Di a Lv, Hai Yan a Li, Jian Fei a Xu, Xian Gang a Lv, Yuan Jie c Feng, Zhi Hong c

a SHANDONG UNIVERSITY (China)

b QILU UNIVERSITY OF TECHNOLOGY (China)

c HEBEI SEMICONDUCTOR RESEARCH INSTITUTE (China)

Author keywords

[No Author keywords available]

Indexed keywords

DEFECT DENSITY; ELECTROCHEMICAL ETCHING; EPILAYERS; FILM PREPARATION; GALLIUM NITRIDE; III-V SEMICONDUCTORS; METALLORGANIC CHEMICAL VAPOR DEPOSITION; ORGANIC CHEMICALS; ORGANOMETALLICS; SAPPHIRE; SCANNING ELECTRON MICROSCOPY; SEMICONDUCTOR QUANTUM WELLS;

AS-GROWN; EPILAYERS GROWN; GAN EPILAYERS; GAN FILM; METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS; NANOPOROUS GAN; NEAR BAND EDGE; PORE DIAMETERS; PORE SPACING; SAPPHIRE SUBSTRATES;

PHOTOLUMINESCENCE;

EID: 84905862466 PISSN: 0256307X EISSN: 17413540 Source Type: Journal
DOI: 10.1088/0256-307X/31/8/088103 Document Type: Article

Times cited : (5)

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