Temperature dependence of biaxial strain and its influence on phonon and band gap of GaN thin film

Chinese Physics B

Volumn 17, Issue 6, 2008, Pages 2245-2250

  Chen, Yang ^a   Xu, Hong Yan ^a   Jian, Ao Qun ^a   Xue, Chen Yang ^a   Zhang, Bin Zhen ^a   Zhang, Wen Dong ^a   Zhang, Zhi Guo ^b   Feng, Zhen ^b  

^a NORTH UNIVERSITY OF CHINA   (China)

^b 13th Research Institute of CETC   (China)

Author keywords

Band gap; Biaxial strain; GaN; Phonon

Indexed keywords

(ABIOTIC AND BIOTIC) STRESS; BAND GAPS; BIAXIAL STRAINING; CHEMICAL VAPOUR DEPOSITION; EPI LAYERS; GAN EPI LAYER; LATTICE PARAMETERS; METAL ORGANIC (MO); SAPPHIRE SUBSTRATES; TEMPERATURE DEPENDENCES; TEMPERATURE RANGES;

CHEMICAL VAPOR DEPOSITION; EPILAYERS; EPITAXIAL GROWTH; GALLIUM NITRIDE; ION BEAM ASSISTED DEPOSITION; METALS; ORGANIC CHEMICALS; ORGANIC COMPOUNDS; ORGANOMETALLICS; SEMICONDUCTING GALLIUM; THICK FILMS;

GALLIUM ALLOYS;

EID: 46749097858     PISSN: 16741056     EISSN: None     Source Type: Journal    
DOI: 10.1088/1674-1056/17/6/051     Document Type: Article

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