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Applied Physics Letters

Volumn 95, Issue 4, 2009, Pages

Role of edge dislocation and Si impurity in linking the blue luminescence and yellow luminescence in n -type GaN films

(8) Zhao, D G a Jiang, D S a Zhu, J J a Liu, Z S a Wang, H a Zhang, S M a Wang, Y T a Yang, Hui b

a INSTITUTE OF SEMICONDUCTORS (China)

b SUZHOU INSTITUTE OF NANO TECH AND NANO BIONICS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ACCEPTOR DOPING; BLUE LUMINESCENCE; EDGE DISLOCATION; EDGE DISLOCATION DENSITY; GAN FILM; INTENSITY RATIO; SI-DOPING; X- RAY DIFFRACTION; YELLOW LUMINESCENCE; YELLOW LUMINESCENCE BANDS;

GALLIUM ALLOYS; GALLIUM NITRIDE; LUMINESCENCE; SEMICONDUCTING GALLIUM; SILICON; STRESS INTENSITY FACTORS;

LIGHT;

EID: 68249096975 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.3187540 Document Type: Article

Times cited : (45)

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