Reduction of threading dislocation density in GaN grown on strain relaxed nanoporous GaN template

Applied Physics Letters

Volumn 90, Issue 17, 2007, Pages

  Hartono, H ^a   Soh, C B ^b   Chow, S Y ^b   Chua, S J ^a   Fitzgerald, E A ^c  

^a NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^b INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^c Massachusetts Institute of Technology   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; DENSITY (SPECIFIC GRAVITY); GROWTH (MATERIALS); METALLORGANIC CHEMICAL VAPOR DEPOSITION; NANOPORES; NITROGEN;

DISLOCATION DENSITY; PHONON PEAK; RAMAN INTENSITY; THREADING DISLOCATION DENSITY (TDD);

GALLIUM NITRIDE;

EID: 34248579190     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2732826     Document Type: Article

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