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Volumn 20, Issue 3, 2003, Pages 398-400
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Etch pits and threading dislocations in GaN films grown by metal-organic chemical vapour deposition
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Author keywords
[No Author keywords available]
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Indexed keywords
EPITAXIAL GROWTH;
ETCHING;
GALLIUM NITRIDE;
III-V SEMICONDUCTORS;
INDUSTRIAL CHEMICALS;
LATTICE MISMATCH;
ORGANIC CHEMICALS;
ORGANOMETALLICS;
POTASSIUM HYDROXIDE;
SAPPHIRE;
SCANNING ELECTRON MICROSCOPY;
SEMICONDUCTOR QUANTUM WELLS;
THERMAL EXPANSION;
TRANSMISSION ELECTRON MICROSCOPY;
ACID SOLUTIONS;
ETCH PITS;
GAN FILM;
HIGH QUALITY;
METAL-ORGANIC CHEMICAL VAPOUR DEPOSITIONS;
MIXED ACIDS;
SAPPHIRE SUBSTRATES;
THREADING DISLOCATION;
TRANSMISSION ELECTRON;
VAPOR DEPOSITION SYSTEMS;
METALLORGANIC CHEMICAL VAPOR DEPOSITION;
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EID: 0037349509
PISSN: 0256307X
EISSN: None
Source Type: Journal
DOI: 10.1088/0256-307X/20/3/324 Document Type: Article |
Times cited : (18)
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References (21)
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