Dislocation annihilation in regrown GaN on nanoporous GaN template with optimization of buffer layer growth

Applied Physics Letters

Volumn 90, Issue 5, 2007, Pages

  Soh, C B ^a   Hartono, H ^b   Chow, S Y ^b   Chua, S J ^a   Fitzgerald, E A ^c  

^a INSTITUTE OF MATERIALS RESEARCH AND ENGINEERING   (Singapore)

^b NATIONAL UNIVERSITY OF SINGAPORE   (Singapore)

^c Massachusetts Institute of Technology Cambridge   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DISLOCATIONS (CRYSTALS); ELECTROCHEMISTRY; ETCHING; NANOSTRUCTURED MATERIALS; OPTIMIZATION; TRANSMISSION ELECTRON MICROSCOPY;

ANNIHILATION; BUFFER LAYER GROWTH; DISLOCATION ANNIHILATION; ELECTROCHEMICAL ETCHING; MICRO-RAMAN MEASUREMENTS; STRAIN RELAXATION;

GALLIUM NITRIDE;

EID: 33846970512     PISSN: 00036951     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.2437056     Document Type: Article

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