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Volumn 180, Issue 1, 1997, Pages 27-33

Some properties of gallium nitride films grown on (0 0 0 1) oriented sapphire substrates by gas source molecular beam epitaxy

(3) Yoon, S F a Li, X B b Kong, M Y b

a NANYANG TECHNOLOGICAL UNIVERSITY (Singapore)

b INSTITUTE OF SEMICONDUCTORS (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANNEALING; CRYSTAL LATTICES; CRYSTAL ORIENTATION; DEPOSITION; MOLECULAR BEAM EPITAXY; RAMAN SPECTROSCOPY; RESIDUAL STRESSES; SAPPHIRE; SEMICONDUCTING GALLIUM COMPOUNDS; SEMICONDUCTOR GROWTH; SUBSTRATES; THERMAL EXPANSION;

COMPRESSIVE STRESSES; GALLIUM NITRIDE; GAS SOURCE MOLECULAR BEAM EPITAXY (GSMBE); PHOTOREFLECTIVITY SPECTROSCOPY; TENSILE STRESSES;

SEMICONDUCTING FILMS;

EID: 0031234568 PISSN: 00220248 EISSN: None Source Type: Journal
DOI: 10.1016/S0022-0248(97)00165-6 Document Type: Article

Times cited : (5)

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