The fabrication of large-area, free-standing GaN by a novel nanoetching process

Nanotechnology

Volumn 22, Issue 4, 2011, Pages

  Zhang, Yu ^a,b   Sun, Qian ^b   Leung, Benjamin ^b   Simon, John ^b   Lee, Minjoo Larry ^b   Han, Jung ^b  

^a SHANDONG UNIVERSITY   (China)

^b Yale University   (United States)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTALLINITIES; GAN LAYERS; HETEROSTRUCTURES; NEW DIMENSIONS; POTENTIOSTATICS;

GALLIUM NITRIDE; TRANSMISSION ELECTRON MICROSCOPY;

GALLIUM ALLOYS;

EID: 79251588418     PISSN: 09574484     EISSN: 13616528     Source Type: Journal    
DOI: 10.1088/0957-4484/22/4/045603     Document Type: Article

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