GaN bulk substrates for GaN based LEDs and LDs

Physica Status Solidi (A) Applied Research

Volumn 180, Issue 1, 2000, Pages 51-58

  Oda, O ^a   Inoue, T ^a   Seki, Y ^a   Kainosho, K ^a   Yaegashi, S ^a   Wakahara, A ^b   Yoshida, A ^b   Kurai, S ^c   Yamada, Y ^c   Taguchi, T ^c  

^a JAPAN ENERGY CORPORATION   (Japan)

^b TOYOHASHI UNIVERSITY OF TECHNOLOGY   (Japan)

^c YAMAGUCHI UNIVERSITY   (Japan)

Author keywords

[No Author keywords available]

Indexed keywords

CRYSTAL GROWTH; DENSITY (SPECIFIC GRAVITY); DISLOCATIONS (CRYSTALS); LIGHT EMITTING DIODES; PRESSURE CONTROL; SEMICONDUCTOR LASERS; SINGLE CRYSTALS; SUBSTRATES; VAPOR PHASE EPITAXY;

DISLOCATION DENSITY; HYDRIDE VAPOR PHASE EPITAXIAL METHOD; PRESSURE CONTROLLED SOLUTION GROWTH;

SEMICONDUCTING GALLIUM COMPOUNDS;

EID: 0034228582     PISSN: 00318965     EISSN: None     Source Type: Journal    
DOI: 10.1002/1521-396X(200007)180:1<51::AID-PSSA51>3.0.CO;2-R     Document Type: Article

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