Nanopores in GaN by electrochemical anodization in hydrofluoric acid: Formation and mechanism

Journal of Applied Physics

Volumn 112, Issue 6, 2012, Pages

  Chen, Danti ^a   Xiao, Hongdi ^a,b   Han, Jung ^a  

^a Yale University   (United States)

^b SHANDONG UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANODIZATION VOLTAGES; DEPLETION LAYER; ELECTROCHEMICAL ANODIZATIONS; ETCHING MECHANISM; HF-ELECTROLYTES; NANOPOROUS MORPHOLOGIES; NANOPOROUS STRUCTURES; PARAMETRIC MAPPING; POROSIFICATION; QUANTITATIVE AGREEMENT; SPACE CHARGE REGIONS; STRAIGHT PORES;

CYCLIC VOLTAMMETRY; ELECTROLYTES; ETCHING; GALLIUM NITRIDE; MORPHOLOGY; SEMICONDUCTOR DOPING; SEMICONDUCTOR JUNCTIONS;

HYDROFLUORIC ACID;

EID: 84867081651     PISSN: 00218979     EISSN: None     Source Type: Journal    
DOI: 10.1063/1.4752259     Document Type: Article

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