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Volumn 244, Issue 6, 2007, Pages 1793-1796

Fabrication and characterization of nano-porous GaN template for strain relaxed GaN growth

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[No Author keywords available]

Indexed keywords


EID: 34250346571     PISSN: 03701972     EISSN: 15213951     Source Type: Journal    
DOI: 10.1002/pssb.200674705     Document Type: Article
Times cited : (14)

References (10)
  • 3
    • 34250331094 scopus 로고    scopus 로고
    • V. Bondarenko, L. Dolgyi, N. Vorozov, V. Yakovtseva, V. Levchenko, and L. Postnova, Abstracts of NATO Advanced Research Workshop on the Perspectives, Science and Technologies for Novel Silicon on Insulator Devices, Kyiv, Ukraine, October 1998, p. 15.
    • V. Bondarenko, L. Dolgyi, N. Vorozov, V. Yakovtseva, V. Levchenko, and L. Postnova, Abstracts of NATO Advanced Research Workshop on the Perspectives, Science and Technologies for Novel Silicon on Insulator Devices, Kyiv, Ukraine, October 1998, p. 15.


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.