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Volumn , Issue , 2013, Pages 217-220

Physics-based memristor models

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTICAL APPROXIMATION; ELECTRONIC MEASUREMENTS; MATERIALS CHARACTERIZATION; MATHEMATICAL DESCRIPTIONS; NUMERICAL SOLUTION; ORDERS OF MAGNITUDE; PHYSICAL PROCESS; PREDICTIVE MODELS;

EID: 84883349576     PISSN: 02714310     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/ISCAS.2013.6571821     Document Type: Conference Paper
Times cited : (36)

References (14)
  • 1
    • 0015127532 scopus 로고
    • Memristor-the missing circuit element
    • L. O. Chua, "Memristor - the missing circuit element," IEEE Trans. Circuit Theory, vol. 18, pp. 507-519, 1971.
    • (1971) IEEE Trans. Circuit Theory , vol.18 , pp. 507-519
    • Chua, L.O.1
  • 2
    • 0016918810 scopus 로고
    • Memristive devices and systems
    • L. O. Chua, S. M. Kang, "Memristive devices and systems," Proc. IEEE, vol. 64, pp. 209-223, 1976.
    • (1976) Proc. IEEE , vol.64 , pp. 209-223
    • Chua, L.O.1    Kang, S.M.2
  • 3
    • 84861185379 scopus 로고    scopus 로고
    • The fourth element
    • L. O. Chua, "The fourth element," Proc. IEEE vol. 100, pp. 1920-1927, 2012.
    • (2012) Proc. IEEE , vol.100 , pp. 1920-1927
    • Chua, L.O.1
  • 4
    • 79952950219 scopus 로고    scopus 로고
    • Resistance switching memories are memristors
    • L. Chua, "Resistance switching memories are memristors," Appl Phys A, vol. 102, pp. 765-783, 2011.
    • (2011) Appl Phys A , vol.102 , pp. 765-783
    • Chua, L.1
  • 6
    • 58349100289 scopus 로고    scopus 로고
    • Exponential ionic drift: Fast switching and low volatility of thin-film memristors
    • D. B. Strukov and R. S. Williams, "Exponential ionic drift: Fast switching and low volatility of thin-film memristors," Appl. Phys. A vol. 94, pp. 515-519, 2009.
    • (2009) Appl. Phys. A , vol.94 , pp. 515-519
    • Strukov, D.B.1    Williams, R.S.2
  • 7
    • 66649107847 scopus 로고    scopus 로고
    • Coupled ionic and electronic transport model of thin-film semiconductor memristive behavior
    • D. B. Strukov, J. L. Borghetti and R. S. Williams, "Coupled Ionic and Electronic Transport Model of Thin-Film Semiconductor Memristive Behavior," Small, vol. 5, pp. 1058-1063,2009.
    • (2009) Small , vol.5 , pp. 1058-1063
    • Strukov, D.B.1    Borghetti, J.L.2    Williams, R.S.3
  • 8
    • 84861577228 scopus 로고    scopus 로고
    • Thermophoresis /diffusion as a mechanism for unipolar resistive switching in metal-oxide-metal memristors
    • D. B. Strukov, F. Alibart and R. S. Williams, "Thermophoresis /diffusion as a mechanism for unipolar resistive switching in metal-oxide-metal memristors," Appl. Phys. A, vol. 107, pp. 509-518, 2012.
    • (2012) Appl. Phys. A , vol.107 , pp. 509-518
    • Strukov, D.B.1    Alibart, F.2    Williams, R.S.3
  • 10
    • 82455167171 scopus 로고    scopus 로고
    • Measuring the switching dynamics and energy efficiency of tantalum oxide memristors
    • art. #505402
    • J. P. Strachan, A. C. Torrezan, G. Medeiros-Ribeiro and R. S. Williams, "Measuring the switching dynamics and energy efficiency of tantalum oxide memristors," Nanotechnology, vol. 22, art. #505402, 2011.
    • (2011) Nanotechnology , vol.22
    • Strachan, J.P.1    Torrezan, A.C.2    Medeiros-Ribeiro, G.3    Williams, R.S.4
  • 13
    • 84860744210 scopus 로고    scopus 로고
    • Sub-100 femto Joule and sub-nanosecond thermally-driven threshold switching
    • art. #215202
    • M. D. Pickett and R. S. Williams, "Sub-100 femtoJoule and sub-nanosecond thermally-driven threshold switching," Nanotechnology, vol. 23, art. #215202, 2012.
    • (2012) Nanotechnology , vol.23
    • Pickett, M.D.1    Williams, R.S.2


* 이 정보는 Elsevier사의 SCOPUS DB에서 KISTI가 분석하여 추출한 것입니다.