Analytical modeling of oxide-based bipolar resistive memories and complementary resistive switches

IEEE Transactions on Electron Devices

Volumn 61, Issue 7, 2014, Pages 2378-2386

  Ambrogio, Stefano ^a   Balatti, Simone ^a   Gilmer, David C ^a   Ielmini, Daniele ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

Complementary resistive switching (CRS); crossbar array; ion migration; metal insulator transition; resistive switching; resistive switching random access memory (RRAM)

Indexed keywords

ANALYTICAL MODELS; HAFNIUM OXIDES; METAL INSULATOR TRANSITION; SWITCHES; SWITCHING SYSTEMS;

COMPLEMENTARY RESISTIVE SWITCHES; CONDUCTIVE FILAMENTS; CROSSBAR ARRAYS; ION MIGRATION; RANDOM ACCESS MEMORY; RESISTIVE SWITCHING; RESISTIVE SWITCHING MEMORY; SWITCHING DYNAMICS;

RANDOM ACCESS STORAGE;

EID: 84903184045     PISSN: 00189383     EISSN: None     Source Type: Journal    
DOI: 10.1109/TED.2014.2325531     Document Type: Article

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