A physical based analytic model of RRAM operation for circuit simulation

Technical Digest - International Electron Devices Meeting, IEDM

Volumn , Issue , 2012, Pages

  Huang, P ^a   Liu, X Y ^a   Li, W H ^a   Deng, Y X ^a   Chen, B ^a   Lu, Y ^a   Gao, B ^a   Zeng, L ^a   Wei, K L ^a   Du, G ^a   Zhang, X ^a   Kang, J F ^a  

^a PEKING UNIVERSITY   (China)

Author keywords

[No Author keywords available]

Indexed keywords

ANALYTIC MODELS; ARRAY SIMULATIONS; ELECTRON HOPPING; METAL CONDUCTIVITY; METAL OXIDES; PARASITIC CAPACITANCE; PULSE OPERATION; TRANSPORT BEHAVIOR;

CIRCUIT SIMULATION; ELECTRON DEVICES;

ANALYTICAL MODELS;

EID: 84876137746     PISSN: 01631918     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IEDM.2012.6479110     Document Type: Conference Paper

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