Development of a semiempirical compact model for DC/AC Cell Operation of HfOx-based ReRAMs

IEEE Electron Device Letters

Volumn 34, Issue 9, 2013, Pages 1133-1135

  Noh, Jinwoo ^a   Jo, Minseok ^a   Kang, Chang Yong ^a   Gilmer, David ^a   Kirsch, Paul ^a   Lee, Jack C ^b   Lee, Byoung Hun ^a  

^a Gwangju Institute of Science and Technology (GIST)   (South Korea)

^b The University of Texas at Austin   (United States)

Author keywords

HfOx insulator layer; ion migration model; resistance change random access memory (ReRAM); semiempirical model

Indexed keywords

CURRENT CROWDING EFFECT; DEVICE CHARACTERISTICS; DYNAMIC CHANGES; INSULATOR LAYER; ION MIGRATION; RESISTANCE CHANGE RANDOM ACCESS MEMORY; SEMI-EMPIRICAL; SEMI-EMPIRICAL MODELING;

ELECTRON DEVICES;

ELECTRONICS ENGINEERING;

EID: 84883183386     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2271831     Document Type: Article

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