Set variability and failure induced by complementary switching in bipolar RRAM

IEEE Electron Device Letters

Volumn 34, Issue 7, 2013, Pages 861-863

  Balatti, Simone ^a   Ambrogio, Stefano ^a   Gilmer, David C ^a   Ielmini, Daniele ^a  

^a POLITECNICO DI MILANO   (Italy)

Author keywords

Memory modeling; memory reliability; nonvolatile memory; resistive switching memory (RRAM)

Indexed keywords

FAST SWITCHING; LOW VOLTAGE OPERATION; MEMORY MODELING; MEMORY RELIABILITY; NON-VOLATILE MEMORY; OPERATION REGIME; RESISTIVE SWITCHING MEMORY; VOLTAGE STRESS;

SWITCHING;

RANDOM ACCESS STORAGE;

EID: 84880069956     PISSN: 07413106     EISSN: None     Source Type: Journal    
DOI: 10.1109/LED.2013.2261451     Document Type: Article

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