Asymmetry, vacancy engineering and mechanism for bipolar RRAM

2012 4th IEEE International Memory Workshop, IMW 2012

Volumn , Issue , 2012, Pages

  Gilmer, D C ^a   Bersuker, G ^a   Koveshnikov, S ^a   Jo, M ^a   Kalantarian, A ^a,b   Butcher, B ^a,c   Geer, R ^c   Nishi, Y ^b   Kirsch, P D ^a   Jammy, Raj ^a  

^a SEMATECH   (United States)

^b STANFORD UNIVERSITY   (United States)

^c STATE UNIVERSITY OF NEW YORK   (United States)

Author keywords

nonvolatile memory; resistive switching memory (RRAM); transition metal oxide

Indexed keywords

DETAILED MODELS; METAL-OXIDE; NON-VOLATILE MEMORIES; RESISTANCE CHANGE; RESISTIVE SWITCHING MEMORIES; TRANSITION-METAL OXIDES; VACANCY ENGINEERING;

METALLIC COMPOUNDS; OXYGEN VACANCIES; TRANSITION METALS;

RANDOM ACCESS STORAGE;

EID: 84864127777     PISSN: None     EISSN: None     Source Type: Conference Proceeding    
DOI: 10.1109/IMW.2012.6213649     Document Type: Conference Paper

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