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Applied Physics Letters

Volumn 102, Issue 21, 2013, Pages

Benchmarking current density in staggered gap In0.53Ga 0.47As/GaAs0.5Sb0.5 heterojunction Esaki tunnel diodes

(9) Romanczyk, B a Thomas, P a Pawlik, D a Rommel, S L a Loh, W Y b Wong, M H b Majumdar, K b Wang, W E b Kirsch, P D b

a Rochester Institute of Technology (United States)

b SEMATECH (United States)

Author keywords

[No Author keywords available]

Indexed keywords

DIODES; HETEROJUNCTIONS; TUNNEL DIODES;

DIFFERENT STRUCTURE; DOPANT CONCENTRATIONS; DOPING DENSITIES; IN0.53GA0.47AS; MATERIAL SYSTEMS; PEAK CURRENT DENSITY; PEAK TO VALLEY CURRENT RATIO; TUNNEL BARRIER;

CURRENT DENSITY;

EID: 84879119317 PISSN: 00036951 EISSN: None Source Type: Journal
DOI: 10.1063/1.4808362 Document Type: Article

Times cited : (21)

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